Thin film transistor and flat panel display including the same
View Patent ↗A thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and is electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; and an ohmic contact layer that is interposed between the source/drain electrodes and the organic semiconductor and contains a compound having a hole transporting unit. By providing the ohmic contact layer, the ohmic contact between source/drain electrodes and the organic semiconductor layer can be effectively achieved and the adhesive force between the source/drain electrodes and the organic semiconductor layer is increased. In addition, a flat panel display having improved reliability can be obtained using the thin film transistor.
1. A thin film transistor comprising:
a gate electrode;
source and drain electrodes insulated from the gate electrode;
an organic semiconductor layer that is insulated from the gate electrode and is electrically connected to the source and drain electrodes;
an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; and
an ohmic contact layer that is interposed between the source/drain electrodes and the organic semiconductor layer and that contains a hole transporting compound and/or is a self assembled monolayer (SAM) including a repeating unit of formula (1) below, or a moiety of formula (2) below:
where X 1 and X 2 are each a single bonded, a substituted or unsubstituted C 1 -C 20 alkylene group, or -Z 1 -NH—C(═O)—O-Z 2 -, Z 1 and Z 2 are each a substituted or unsubstituted C 1 -C 20 alkylene group;
Y 1 is a hole transporting unit;
Y 2 , W 1 and W 2 are each hydrogen, a halogen atom, a C 1 -C 20 alkyl group, a C 1 -C 20 alkoxy group, or the hole transporting unit, at least one of Y 2 , W 1 and W 2 is the hole transporting unit; and
* and *′ indicate binding with the source and drain electrodes or the organic semiconductor layer,
wherein the hole transporting compound is at least one selected from the group consisting of
where R 1 , R 2 , R 3 , R 4 , R 5 , R 6 and R 7 are each hydrogen, a substituted or unsubstituted C 6 -C 30 aryl group, or a substituted or unsubstituted C 5 -C 30 heteroaryl group, wherein at least one of R 1 , R 2 and R 3 , and at least one of R 4 , R 5 , R 6 and R 7 are a substituted or unsubstituted C 6 -C 30 aryl group, or a substituted or unsubstituted C 5 -C 30 heteroaryl group;
R 8 is hydrogen, or a substituted or unsubstituted C 1 -C 30 alkyl group;
Ar 1 is a substituted or unsubstituted C 6 -C 30 arylene group, or a substituted or unsubstituted C 5 -C 30 heteroarylene group;
n is an integer from 1 to 10; and
Q 1 , Q 2 , Q 3 , Q 4 and Q 5 are each selected from N, C, P and S.
2. The thin film transistor of claim 1 , wherein the hole transporting compound and/or the compound having the hole transporting unit has a work function of 4.5-5.5 eV.
3. The thin film transistor of claim 1 , wherein
the source and drain electrodes are made of a material that has a work function that is less than a work function of a material that makes up the organic semiconductor layer and
the hole transporting compound and/or the compound having the hole transporting unit has a work function of that is greater than the work function of the material of the source and drain electrodes and less than the work function of the material of the organic semiconductor.
4. The thin film transistor of claim 1 , wherein the hole transporting compound includes at least one selected from the group consisting of N,N′-bis(3-methylphenyl)-N,N′-diphenyl-[1,1-biphenyl]-4,4′-diamine (TPD), N,N′-di(naphthalene-1-yl)-N,N′-diphenyl benzidine (NPD), 1,3,5-tricarbazolyl benzene, 4,4′-biscarbazolylbiphenyl (CBP), polyvinylcarbazole, m-biscarbazolylphenyl, 4,4′-biscarbazolyl-2,2′-dimethylbiphenyl, 4,′4″-tri(N -carbazolyl) triphenylamine, 1,3,5-tri(2-carbazolylphenyl)benzene, 1,3,5-tris(2-carbazolyl-5-methoxyphenyl)benzene, bis(4-carbazolylphenyl)silane, BMA-Nt, TBA, o-TTA, p-TTA, m-TTA, Spiro-TPD, and TPTE.
5. The thin film transistor of claim 1 , wherein the hole transporting unit
includes a radical of at least one selected from the group consisting of
where R 1 , R 2 , R 3 , R 4 , R 5 , R 6 and R 7 are each hydrogen, a substituted or
unsubstituted C 6 -C 30 aryl group, or a substituted or unsubstituted C 5 -C 30 heteroaryl group, at least one of R 1 , R 2 and R 3 , and at least one of R 4 , R 5 , R 6 and R 7 are a substituted or unsubstituted C 6 -C 30 aryl group, or substituted or unsubstituted C 5 -C 30 heteroaryl group;
R 8 is hydrogen, or a substituted or unsubstituted C 1 -C 30 alkyl group;
Ar 1 is a substituted or unsubstituted C 6 -C 30 arylene group, or a substituted or unsubstituted C 5 -C 30 heteroarylene group;
n is an integer from 1 to 10; and
Q 1 , Q 2 , Q 3 , Q 4 and Q 5 are each selected from N, C, P and S.
6. The thin film transistor of claim 1 , wherein the hole transporting unit includes at least one selected from the group consisting of a radical of N,N′-bis (3-methylphenyl)-N,N′-diphenyl-[1,1-biphenyl]-4,4′-diamine (TPD), N,N′-di(naphthalene-1-yl)-N,N′-diphenyl benzidine (NPD), 1,3,5-tricarbazolyl benzene, 4,4′-biscarbazolylbiphenyl (CBP), polyvinylcarbazole, m-biscarbazolylphenyl, 4,4′-biscarbazolyl-2,2′-dimethylbiphenyl, 4,′4″-tri(N -carbazolyl)triphenylamine, 1,3,5-tri(2-carbazolylphenyl)benzene, 1,3,5-tris(2-carbazolyl-5-methoxyphenyl) benzene, bis(4-carbazolylphenyl) silane, BMA-Nt, TBA, o-TTA, p-TTA, m-TTA, Spiro-TPD, and TPTE.
7. The thin film transistor of claim 1 , wherein the ohmic contact layer is a self assembled monolayer (SAM) including a repeating unit of formula (3) below, or a moiety of formula (4) below:
where * and *′ indicate binding with the source and drain electrodes or the organic semiconductor layer.
8. The thin film transistor of claim 1 , wherein the ohmic contact layer is formed using a deposition method, a coating method, or a self-assembled monolayer manufacturing process.
9. The thin film transistor of claim 1 , wherein the ohmic contact layer provides an adhesive force between the source and drain electrodes and the organic semiconductor layer.
10. The thin film transistor of claim 1 , wherein the source and drain electrodes include at least one selected from the group of Au, Pd, Pt, Ni, Rh, Ru, Ir, Os, Al and Mo, an Al:Nd alloy, an MoW alloy, ITO, IZO, NiO, Ag 2 O, In 2 O 3 —Ag 2 O, CuAlO 2 , SrCu 2 O 2 and Zr-doped ZnO.
11. The thin film transistor of claim 1 , wherein the organic semiconductor layer includes at least one of pentacene, tetracene, anthracene, naphthalene, α-6-thiophene, α-4-thiophene, perylene and a derivative thereof, rubrene and a derivative thereof, coronene and a derivative thereof, perylene tetracarboxylic diimide and a derivative thereof, perylene tetracarboxylic dianhydride and a derivative thereof, polythiophene and a derivative thereof, polyparaphenylenevinylene and a derivative thereof, polyparaphenylene and a derivative thereof, polyfluorene and a derivative thereof, polythiophenevinylene and a derivative thereof, polythiophene-heterocyclic aromatic copolymer and a derivative thereof, an oligonaphthalene and a derivative thereof, an oligothiophene of α-5-thiophene and a derivative thereof, metal-containing or metal-free phthalocyanine and a derivatives thereof, pyromellitic dianhydride and a derivative thereof, and pyromellitic diimide and a derivative thereof.
12. A flat panel display comprising the thin film transistor of claim 1 in each pixel, wherein the source or drain electrode of the thin film transistor is connected to a pixel electrode.