IP Library Granted Patent US 7,548,666
Granted Patent B2
US 7,548,666 · App. 11/582,984 · Granted Jun 16, 2009

Solid state imaging device and method for manufacturing the same

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Quick Facts
Patent No.
US 7,548,666
App. No.
11/582,984
Granted
Jun 16, 2009
Kind
B2
Abstract

A plurality of light receiving elements are arranged in a matrix with uniform space therebetween in a light receiving region defined on a semiconductor substrate. A plurality of read-out electrodes are formed on the semiconductor substrate in an arrangement corresponding to the light receiving elements to read charges generated by the light receiving elements, a light shield film having openings positioned above the light receiving elements is formed to cover the read-out electrodes, first optical waveguides are formed in the openings above the light receiving elements and second optical waveguides are formed on the light shield film. The second optical waveguides are in the form of dots, stripes or a grid when viewed in plan.

Claims (16)

1. A solid state imaging device including a plurality of light receiving elements arranged in a substrate such that a substrate region is defined between adjacent light receiving elements, the solid state image device comprising:

first optical waveguides formed above the light receiving elements;

second optical waveguides formed over the respective substrate regions; and

condenser lenses provided in the same arrangement as the light receiving elements and the first optical waveguides when viewed in plan, wherein

the second optical waveguides are positioned between the condenser lenses when viewed in plan.

2. The solid state imaging device of claim 1 further comprising light absorbers arranged below the second optical waveguides.

3. The solid state imaging device of claim 1 , wherein the second optical waveguides are column-shaped.

4. The solid state imaging device of claim 1 , wherein the second optical waveguides are in the form of a grid or stripes when viewed in plan.

5. The solid state imaging device of claim 1 further comprising:

charge transfer portions formed in the substrate between the light receiving elements;

a gate insulating film formed on the charge transfer portions;

gate electrodes formed on the gate insulating film;

a light shield film covering the gate electrodes and having openings positioned above the light receiving elements; and

an insulating film covering the surface of the light shield film and the inside of the openings, wherein

the first optical waveguides are formed in the openings and

the second optical waveguides are formed above the light shield film.

Assignments (4)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 26, 2014
From: PANASONIC CORPORATION
To: COLLABO INNOVATIONS, INC.
Reel/Frame 033021/0806 →
LIEN Recorded Jan 13, 2014
From: COLLABO INNOVATIONS, INC.
To: PANASONIC CORPORATION
Reel/Frame 031997/0445 →
CHANGE OF NAME Recorded Nov 24, 2008
From: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
To: PANASONIC CORPORATION
Reel/Frame 021897/0671 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 13, 2007
From: KURIYAMA, TOSHIHIRO; TOMOZAWA, ATSUSHI
To: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
Reel/Frame 019002/0965 →