Semiconductor device
View Patent ↗A Ti barrier film and a TiN barrier film are formed between a top-level pad made of copper or an alloy film mainly composed of copper and an Al pad. The Ti barrier film is formed to have a greater thickness than the TiN barrier film.
1. A semiconductor device comprising:
a first wiring containing copper and formed above a semiconductor substrate;
a first barrier film made of Ti formed on and in contact with the first wiring, and having a thickness of 100 nm or more; and
a second wiring formed on the first barrier film,
wherein the first wiring is a buried wiring buried in an insulating film.
2. The device of claim 1 ,
wherein the second wiring is made of Al or Al alloy.
3. The device of claim 1 ,
wherein the second wiring is a pad for bonding.
4. A semiconductor device comprising:
a first wiring containing copper and formed above a semiconductor substrate;
a first barrier film made of Ti formed on and in contact with the first wiring;
a second barrier film made of TiN formed on the first barrier film and having a smaller thickness than the first barrier film; and
a second wiring formed on the second barrier film,
wherein the first wiring is a buried wiring buried in an insulating film.
5. The device of claim 4 ,
wherein the first barrier film has a thickness of 100 nm or more, and the second barrier film has a thickness of 10 nm or more.
6. The device of claim 4 ,
wherein the second wiring is made of Al or Al alloy.
7. The device of claim 4 ,
wherein the second wiring is a pad for bonding.
8. The device of claim 1 further comprising a passivation film formed on the first wiring,
wherein the first barrier film includes a first portion being in contact with the first wiring and located in an opening formed in the passivation film, and a second portion being in contact with the passivation film and located around the first portion.
9. The device of claim 8 , wherein the passivation film is made of SiN.
10. The device of claim 8 , wherein the passivation film has a thickness of 150 nm through 300 nm.
11. The device of claim 8 , wherein
the first wiring is made of Cu or Cu alloy, and
the second wiring is made of Al or Al alloy.
12. The device of claim 1 , wherein
the second wiring is an Al pad, and
a copper density in the Al pad is 0.1% or lower.
13. The device of claim 1 , wherein to the bottom of the first wiring, a connection via is connected.
14. The device of claim 4 further comprising a passivation film formed on the first wiring,
wherein the first barrier film includes a first portion being in contact with the first wiring and located in an opening formed in the passivation film, and a second portion being in contact with the passivation film and located around the first portion.
15. The device of claim 14 , wherein the passivation film is made of SiN.
16. The device of claim 14 , wherein the passivation film has a thickness of 150 nm through 300 nm.
17. The device of claim 14 , wherein
the first wiring is made of Cu or Cu alloy, and
the second wiring is made of Al or Al alloy.
18. The device of claim 4 , wherein
the second wiring is an Al pad, and
a copper density in the Al pad is 0.1% or lower.
19. The device of claim 4 , wherein to the bottom of the first wiring, a connection via is connected.