Capacitor and process for manufacturing the same
View Patent ↗Method for solving the problem caused when forming a crown-structure capacitor in a trench which is formed in an insulating film, and having difficulty in electrical by connecting a first upper electrode formed on the inside wall of the trench and a second upper electrode which is to be a plate because of the intervention of dielectric between the first and second upper electrodes. The conducting state of the first upper electrode and the plate upper electrode is ensured by utilizing a tantalum oxide film formed on a titanium nitride film, which is brought to a completely conducting state when heat treated. A crown structure is formed without removing the insulating film, in which a trench has been formed, by wet etching, whereby a stacked trench capacitor, which has double the capacity is provided while eliminating the collapse of the lower electrode or pair bit defect.
1. A capacitor, which comprises at least a lower electrode, a dielectric and an upper electrode:
wherein the upper electrode comprises a first upper electrode and a second upper electrode;
the first upper electrode has a portion where the first upper electrode is opposite to the second upper electrode via the dielectric; and
the first upper electrode and the second upper electrode are electrically connected with each other via the dielectric which is in the conducting state at the portion where the first upper electrode is opposite to the second upper electrode.
2. The capacitor according to claim 1 , which is formed in the inside of a trench formed in an insulating film and comprises the lower electrode, the dielectric and the upper electrode:
wherein the lower electrode has a crown structure having an outside face and an inside face;
the upper electrode comprises the first upper electrode which is opposite to the outside face of the lower electrode, and the dielectric and the second upper electrode which extend from the inside face of the lower electrode to the surface other than the surface of the trench; and
the first upper electrode and the second upper electrode are electrically connected with each other via the dielectric which is in the conducting state at the portion where the first upper electrode is opposite to the second upper electrode.
3. The capacitor according to claim 1 ,
wherein on the outside face of the lower electrode, a first capacitor region is provided which comprises a first dielectric formed in contact with the outside face of the lower electrode and a first upper electrode formed on the side face of the trench opposite to the lower electrode,
on the inside face of the lower electrode, a second capacitor region is provided which comprises a second dielectric formed in contact with the inside face of the lower electrode and a second upper electrode formed in contact with the second dielectric,
the second dielectric and the second upper electrode extend on the surface other than the surface of the trench, and
the first upper electrode and the second upper electrode are electrically connected with each other via the second dielectric which is in the conducting state at the portion the first upper electrode is opposite to the second upper electrode.
4. The capacitor according to claim 1 , wherein the first upper electrode is made of titanium or titanium nitride, and the dielectric is made of tantalum oxide.
5. The capacitor according to claim 3 , wherein the second dielectric is made of tantalum oxide.
6. The capacitor according to claim 1 , wherein the lower electrode is made of at least one material selected from the group consisting of polycrystalline silicon, metal silicide, tungsten and the compounds thereof, and ruthenium.
7. A process for manufacturing a capacitor which comprises a conductive plug connected to the surface of a semiconductor substrate and a lower electrode which is connected to the conductive plug, comprising at least:
(1) a step of forming a trench in a specified position of an insulating film which is formed on the whole surface of the conductive plug and exposing the surface of the conductive plug;
(2) a step of forming a first upper electrode on the side wall of the trench;
(3) a step of forming a first dielectric on the side wall of the trench on which the first upper electrode has been formed;
(4) a step of forming a lower electrode on the inside face of the trench on which the first dielectric has been formed and connecting the lower electrode with the conductive plug;
(5) a step of forming a second dielectric so that it extends on the whole surface including the inside face of the trench on which the lower electrode has been formed; and
(6) a step of forming a second upper electrode on the whole surface of the second dielectric including the inside face of the trench.
8. The process for manufacturing the capacitor according to claim 7 , wherein the first upper electrode is electrically connected with the second upper electrode via the second dielectric which is in the conducting state at the portion where the second dielectric is in contact with the upper end of the first upper electrode.
9. The process for manufacturing the capacitor according to claim 7 , wherein the first upper electrode is made of titanium or titanium nitride, the first dielectric comprises at least aluminum oxide formed by atomic layer deposition, and the second dielectric is made of tantalum oxide.
10. The process for manufacturing the capacitor according to claim 7 , wherein the lower electrode is made of at least one material selected from the group consisting of polycrystalline silicon, metal silicide, tungsten and the compounds thereof, and ruthenium.
11. The process for manufacturing the capacitor according to claim 7 , further comprising a step of heat treating in the temperature range of 600° C. to 750° C., after the formation of the second dielectric made of tantalum oxide.