Electronic devices
An electronic device, such as a thin film transistor containing a semiconductor of Formula/Structure wherein R, R′ and R″ are, for example, independently hydrogen, a suitable hydrocarbon, a suitable hetero-containing group, a halogen, or mixtures thereof; and n represents the number of repeating units.
1. An electronic device comprising a semiconductor homopolymer, wherein said semiconductor homopolymer is a poly(dithienylbenzo[1,2-b:4,5-b′]dithiophene) of Formula (1):
wherein R′″ is an alkyl having from about 1 to about 35 carbon atoms; and n represents the number of repeating groups and is a number of from about 2 to about 5,000.
2. A device in accordance with claim 1 wherein said semiconductor homopolymer is a poly(dithienylbenzo[1,2-b:4,5-b′]dithiophene) of Formula 21:
wherein the number average molecular weight (M n ) of said semiconductor is from about 500 to about 400,000, and the weight average molecular weight (M w ) of said semiconductor is from about 600 to about 500,000 both as measured by gel permeation chromatography using polystyrene standards.
3. An electronic device comprising a semiconductor homopolymer having a repeating group of Formula (I)
wherein R is alkoxy containing from 1 to about 30 carbon atoms; wherein R′ and R″ are independently selected from hydrogen, alkyl, alkoxy, F, Cl, Br, I, CN, and NO 2 ; and wherein n represents the number of repeating groups.
4. A thin film transistor comprised of a substrate, a gate electrode, a gate dielectric layer, a source electrode and a drain electrode, and in contact with the source/drain electrodes and the gate dielectric layer a semiconductor layer comprised of a semiconductor homopolymer of Formula (1):
wherein R′″ is alkyl having from about 1 to about 35 carbon atoms; and n represents the number of repeating groups.
5. A thin film transistor in accordance with claim 4 wherein R′″ is alkyl having 1 to 20 carbon atoms; n represents a number of from about 5 to about 2,500, from about 5 to about 1,000, or from about 5 to about 200; and
the number average molecular weight (M n ) of the polymer is from about 500 to about 400,000, or from about 1,000 to about 150,000, and the weight average molecular weight (M w ) of the polymer is from about 600 to about 500,000, or from about 1,500 to about 200,000, both as measured by gel permeation chromatography using polystyrene standards.
6. A thin film transistor in accordance with claim 4 wherein said semiconductor homopolymer is of Formula (21):
wherein n is a number of from 2 to about 5,000.
7. A thin film transistor in accordance with claim 6 wherein n is from about 5 to about 1,000, from about 5 to about 800, or from about 5 to about 200; and the number average molecular weight (M n ) of the polymer is from about 500 to about 400,000, or from about 1,000 to about 150,000; and the weight average molecular weight (M w ) of the polymer is from about 600 to about 500,000, or from about 1,500 to about 200,000.
8. A thin film transistor in accordance with claim 4 wherein said semiconductor homopolymer is
wherein n is a number of from about 5 to about 2,500.
9. An electronic device comprising a semiconductor homopolymer, wherein the homopolymer has a repeating unit of one of the following structures (9)-(13):
wherein R′″ and R″″ are different and are selected from alkyl having from about 1 to about 35 carbon atoms; X represents F, Cl, Br, CN, or NO 2 ; and n is a number of from 2 to about 5,000.
10. An electronic device comprising a semiconductor homopolymer having a repeating group of Formula (I):
wherein R is alkoxy; R′ and R″ are independently selected from hydrogen, alkyl, alkoxy, F, Cl, Br, I, CN, and NO 2 ; wherein at least one of R′ and R″ is not hydrogen; and n represents the number of repeating groups.