Method of manufacturing semiconductor device

1. A method of manufacturing a semiconductor device, comprising:

subjecting a semiconductor substrate having an aluminum film formed thereabove to a processing to at least partially expose a surface of the aluminum film; and

carrying out a surface processing to remove an after-processing residue that remains on the exposed surface of the aluminum film,

wherein the surface processing comprises treating the exposed surface of the aluminum film with a first liquid chemical containing an anion component and then with an alkaline, second liquid chemical, wherein the second liquid chemical is free of metals and of halogens.

2. The method according to claim 1 , wherein a pH value of the first liquid chemical is in a range of 1 to 7.

3. The method according to claim 1 , wherein the exposed surface of the aluminum film is contacted with the first liquid chemical at a temperature of 20 to 40° C. for 5 to 900 seconds.

4. The method according to claim 1 , wherein a pH value of the second liquid chemical is larger than 7, and 11 or less.

5. The method according to claim 1 , wherein the second liquid chemical comprises an alkali selected from the group consisting of ammonium hydroxide, choline, tetramethylammonium hydroxide, tetraethylammonium hydroxide, triethylmonomethylammonium hydroxide, and a combination thereof.

6. The method according to claim 1 , wherein the exposed surface of the aluminum film is contacted with the second liquid chemical at 20 to 40° C. for 1 to 300 seconds.

7. The method according to claim 1 , wherein the processing to at least partially expose a surface of the aluminum film comprises patterning the aluminum film using a resist mask by means of dry etching and removing the resist mask by means of dry etching.

8. The method according to claim 7 , wherein the patterning by means of dry etching is carried out by using a gas comprising a fluorocarbon, HCl, HBr or a mixture thereof.

9. The method according to claim 7 , wherein the removing the resist mask by means of dry etching is carried out by using a gas comprising oxygen, nitrogen, hydrogen, helium or a mixture thereof.

10. The method according to claim 7 , wherein a pH value of the first liquid chemical is 1 to 7, and a pH value of the second liquid chemical is larger than 7 and 11 or less.

11. The method according to claim 1 , wherein the processing to at least partially expose a surface of the aluminum film comprises forming an insulation film on the aluminum film, and forming a contact hole in the insulation film to partially expose a surface of the aluminum film.

12. The method according to claim 11 , wherein the contact hole is formed by means of dry etching using a gas comprising a fluorocarbon.

13. The method according to claim 11 , wherein a pH value of the first liquid chemical is 1 to 7, and a pH value of the second liquid chemical is larger than 7 and 11 or less.

14. The method according to claim 1 , wherein the first liquid chemical comprises an inorganic acid or a salt thereof, or an organic acid or a salt thereof.

15. The method according to claim 14 , wherein the first liquid chemical comprises an inorganic acid or a salt thereof, and the inorganic acid is selected from the group consisting of a hydrohalic acid, sulfuric acid, nitric acid, sulfurous acid, hydrocyanic acid, carbonic acid, hydrocarbonic acid, hydrosulfuric acid, phosphoric acid and a combination thereof.

16. The method according to claim 14 , wherein the first liquid chemical comprises an organic acid or a salt thereof, and the organic acid is selected from the group consisting of a carboxylic acid, a sulfonic acid, an amino acid and a combination thereof.

17. The method according to claim 14 , wherein the first liquid chemical comprises a halogen.

18. The method according to claim 17 , wherein the first liquid chemical comprises fluorine.