Solid-state image pickup device and method for manufacturing the same
Realized are a solid-state image pickup device whose element patterns are miniaturized and a method for manufacturing the solid-state image pickup device, in which furnace-annealing is employed without performing a process of nitriding a gate oxide film and a rapid thermal treatment in main heat treatment processes. The method for manufacturing the solid-state image pickup device according to the present invention comprises the steps of forming respective gate insulating films of an N-channel transistor and a P-channel transistor by thermally oxidizing a semiconductor substrate; forming a gate electrode of the P-channel transistor and forming a gate electrode of the N-channel transistor so as to have a minimum gate length equal to or less than 0.3 μm; implanting impurity into the semiconductor substrate utilizing the gate electrodes as a mask; and furnace-annealing the semiconductor substrate having the impurity implanted thereinto.
1 . A method for manufacturing a solid-state image pickup device, which includes a plurality of pixels disposed in a matrix manner, peripheral circuitry which drives the plurality of pixels, an N-channel transistor, and a P-channel transistor on a semiconductor substrate, comprising the steps of:
forming respective gate insulating films of the N-channel transistor and the P-channel transistor by thermally oxidizing the semiconductor substrate;
forming a gate electrode of the P-channel transistor and forming a gate electrode of the N-channel transistor so that a minimum gate length of the gate electrode of the N-channel transistor is equal to or less than 0.3 μm;
implanting impurity into the semiconductor substrate, utilizing the formed gate electrodes as a mask; and
furnace-annealing the semiconductor substrate having the impurity implanted thereinto.
2 . The method for manufacturing the solid-state image pickup device according to claim 1 , wherein
respective gate electrodes of the N-channel transistor and the P-channel transistor are formed by N-type silicon films.
3 . The method for manufacturing the solid-state image pickup device according to claim 1 , further comprising the steps of:
forming a metal film on the semiconductor substrate having the impurity implanted thereinto; and
forming a metal compound film which contains a material of the metal film and a material on the semiconductor substrate.
4 . The method for manufacturing the solid-state image pickup device according to claim 3 , wherein at the step of forming the metal compound film, the semiconductor substrate having the metal film formed thereon is heat-treated at a temperature equal to or less than 900° C.
5 . The method for manufacturing the solid-state image pickup device according to claim 3 , wherein the step of furnace-annealing is performed after the step of forming the metal compound film.
6 . A solid-state image pickup device which includes a plurality of pixels disposed in a matrix manner, peripheral circuitry which drives the plurality of pixels, an N-channel transistor, and a P-channel transistor on a semiconductor substrate, comprising:
a gate insulating film made of a silicon oxide; and
gate electrodes made of an N-type silicon film,
wherein the gate electrode of the N-channel transistor is formed so as to have a minimum gate length equal to or less than 0.3 μm.
7 . The solid-state image pickup device according to claim 6 , wherein a minimum gate length of the gate electrode of the P-channel transistor is greater than the minimum gate length of the N-channel transistor.
8 . The solid-state image pickup device according to claim 6 , wherein the P-channel transistor has a buried channel structure.
9 . The solid-state image pickup device according to claim 6 , wherein the impurity introduced into the N-type silicon film is phosphorus or arsenic.