IP Library Granted Patent US 7,736,761
Granted Patent B2
US 7,736,761 · App. 11/591,269 · Granted Jun 15, 2010

Buffer layer for thin film structures

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Quick Facts
Patent No.
US 7,736,761
App. No.
11/591,269
Granted
Jun 15, 2010
Kind
B2
Abstract

A composite structure including a base substrate and a layer of a mixture of strontium titanate and strontium ruthenate is provided. A superconducting article can include a composite structure including an outermost layer of magnesium oxide, a buffer layer of strontium titanate or a mixture of strontium titanate and strontium ruthenate and a top-layer of a superconducting material such as YBCO upon the buffer layer.

Claims (16)

1. A composite structure for subsequent growth of an epitaxial film layer thereon comprising:

a base substrate; and,

a buffer layer of a single phase SrTi x Ru 1−x O 3 where 0<x<1 thereon, and in direct contact with, said base substrate.

2. The composite structure of claim 1 further including at least one layer of a second buffer material upon the layer of single phase SrTi x Ru 1−x O 3 where 0<x<1.

3. The composite structure of claim 1 wherein said base substrate is of a material selected from the group consisting of polycrystalline metals, polycrystalline ceramics, single crystal lanthanum aluminum oxide, single crystal aluminum oxide, single crystal magnesium oxide, silica and glass.

4. The composite structure of claim 1 wherein said base substrate is of a material selected from the group consisting of polycrystalline ceramics, single crystal lanthanum aluminum oxide, single crystal aluminum oxide, single crystal magnesium oxide, silica and glass.

5. The composite structure of claim 1 where x=0.5.

6. A composite structure for subsequent growth of an epitaxial film layer thereon comprising:

a base metallic substrate having a layer of magnesium oxide thereon, and in direct contact with, said base metallic substrate; and

a buffer layer of a single phase SrTi x Ru 1−x O 3 where 0<x<1 thereon, and in direct contact with, said layer of magnesium oxide.

7. The composite structure of claim 6 wherein said layer of magnesium oxide is deposited by ion-beam-assisted deposition.

8. The composite structure of claim 6 wherein said buffer layer is a mixture of strontium titanate and strontium ruthenate.

9. The composite structure of claim 6 further including at least one layer of a second buffer material upon the layer of SrTi x Ru 1−x O 3 where 0<x<1.

10. The composite structure of claim 9 wherein the second buffer material is cerium oxide.

11. The composite structure of claim 6 wherein the epitaxial film layer is an epitaxial high temperature superconducting thin film.

12. The composite structure of claim 6 wherein x=0.5.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 8, 2018
From: LOS ALAMOS NATIONAL SECURITY, LLC
To: TRIAD NATIONAL SECURITY, LLC
Reel/Frame 047485/0260 →