Mask layout design improvement in gate width direction
In a cell comprising an N well and a P well, a distance SP 04 from a center line of a contact N-type region to an N well end of the N well is set to be a distance which causes a transistor not to be affected by resist. A distance from a well boundary to the center line of the contact N-type region is equal to SP 04 . A design on the P well is similar to that on the N well. Thereby, modeling of the transistor in the cell can be performed, taking into consideration an influence from resist in one direction. Also, by fabricating a cell array which satisfies the above-described conditions, design accuracy can be improved.
1. A semiconductor circuit device comprising a cell array formation region made of cells which are arranged in an array, each cell having a first conductivity type MIS transistor and a second conductivity type MIS transistor, wherein
in the cell array formation region, a plurality of first conductivity type first wells and a plurality of second conductivity type second wells are alternately arranged in a gate width direction,
a distance between an outer end portion of each outermost well of the first wells and the second wells in the gate width direction in the cell array formation region, and an active region formed in the outermost well, is set to be larger than or equal to a predetermined value,
an outermost well contact region is provided between the active region and the outer end portion of the outermost well, and
a distance from a boundary line between the outermost well and another well adjacent thereto, to the outer end portion of the outermost well, is one time or more and two times or less larger than a distance from the boundary line to a center line of the outermost well contact region.
2. The semiconductor circuit device of claim 1 , wherein the predetermined value is 1 μm.
3. The semiconductor circuit device of claim 1 , wherein a distance from an end portion in the gate length direction of an outer frame of the cell to the active region is larger than a distance from the boundary line to the active region.
4. The semiconductor circuit device of claim 1 , wherein a distance from an end portion in the gate length direction of an outer frame of the cell to the active region is 1 μm.
5. The semiconductor circuit device of claim 1 , wherein
in a first well located further inside than the outermost well in the gate width direction in the cell array formation region, a first active region and a second active region opposed to each other in the gate width direction are provided, and a first well contact region is provided between the first active region and the second active region, and
a distance from a boundary line between the first well and the second well to an end portion in the gate width direction of the first well, is one time or more and two times or less larger than a distance from the boundary line to a center line of the first well contact region.
6. The semiconductor circuit device of claim 1 , wherein the first conductivity type is an N type, and the second conductivity type is a P type.
7. A semiconductor circuit device in which a plurality of cells are arranged in an array, each cell having an N well and a P well formed in a substrate, a first PMIS active region formed in the N well, a first P-channel type transistor formed on the first PMIS active region and having a gate electrode, a first NMIS active region formed in the P well, a first N-channel type transistor formed on the first NMIS active region and having a gate electrode, a contact N-type region formed in the N well, and a contact P-type region formed in the P well, wherein
a distance from a boundary line between the N well and the P well to an end portion in a gate width direction of the N well, is one time or more and two times or less larger than a distance from the boundary line to a center line of the contact N-type region, and
a distance from the boundary line to an end portion in the gate width direction of the P well is one time or more and two times or less larger than a distance from the boundary line to a center line of the contact P-type region.
8. A semiconductor circuit device comprising a cell array formation region made of cells which are arranged in an array, each cell having a first conductivity type MIS transistor and a second conductivity type MIS transistor, wherein
in the cell array formation region, a plurality of first conductivity type first wells and a plurality of second conductivity type second wells are alternately arranged in a gate width direction,
of the first wells and the second wells, a distance between an outer end portion of each outermost well of the first wells and the second wells in the gate width direction in the cell array formation region, and an active region formed in the outermost well, is set to be larger than or equal to a predetermined value,
in a first well located further inside than the outermost well in the gate width direction in the cell array formation region, a first active region and a second active region opposed to each other in the gate width direction are provided, and a first well contact region is provided between the first active region and the second active region, and
a distance from a boundary line between the first well and the second well to an end portion in the gate width direction of the first well, is one time or more and two times or less larger than a distance from the boundary line to a center line of the first well contact region.
9. The semiconductor circuit device of claim 8 , wherein the predetermined value is 1 μm.
10. The semiconductor circuit device of claim 8 , wherein a distance from an end portion in the gate length direction of an outer frame of the cell to the active region is larger than a distance from the boundary line to the active region.
11. The semiconductor circuit device of claim 8 , wherein a distance from an end portion in the gate length direction of an outer frame of the cell to the active region is 1 μm.
12. The semiconductor circuit device of claim 8 , wherein the first conductivity type is an N type, and the second conductivity type is a P type.