Nanoscopic wired-based devices and arrays
Electrical devices comprised of nanoscopic wires are described, along with methods of their manufacture and use. The nanoscopic wires can be nanotubes, preferably single-walled carbon nanotubes. They can be arranged in crossbar arrays using chemically patterned surfaces for direction, via chemical vapor deposition. Chemical vapor deposition also can be used to form nanotubes in arrays in the presence of directing electric fields, optionally in combination with self-assembled monolayer patterns. Bistable devices are described.
1 . An article, comprising:
an electrical crossbar junction defined by a nanotube and a conductor.
2 . An article as in claim 1 , wherein the nanotube and the conductor are in contact with each other.
3 . An article as in claim 2 , wherein the nanotube and the conductor are in electrical contact with each other.
4 . An article as in claim 2 , wherein the nanotube and the conductor are in van der Waals contact with each other.
5 . An article as in claim 1 , wherein the nanotube and the conductor are not in contact with each other.
6 . An article as in claim 5 , wherein a resistance between the nanotube and the conductor is detectable from a resistance between the nanotube and the conductor in van der Waals contact with each other.
7 . An article as in claim 1 , wherein the nanotube is supported above the conductor, relative to the substrate.
8 . An article as in claim 7 , wherein the nanotube is positioned across a trench in the substrate containing the conductor.
9 . An article as in claim 1 , wherein the nanotube has sufficient stiffness to remain free of contact with the conductor.
10 . An article as in claim 9 , wherein the nanotube has a sufficient Young's modulus, such that the nanotube is capable of deformable van der Waals contact with the conductor at the junction, upon exposure to a stimulus.
11 . An article as in claim 10 , wherein the nanotube and the conductor have sufficient adhesion energy to maintain deformable van der Waals contact upon removal of the stimulus.
12 . A memory device, comprising:
a memory element comprising at least one nanoscopic wire, the memory element having a first stable state and a second stable state, the memory element being mechanically reversibly switchable between the first stable state and the second stable state by an electric field.
13 . The memory device of claim 12 , wherein the memory element comprises a junction of the at least one nanoscopic wire and a conductor.
14 . The memory device of claim 13 , wherein the first stable state comprises the at least one nanoscopic wire and the conductor in van der Waals contact.
15 . The memory device of claim 12 , wherein information stored in the memory element is volatile.
16 . The memory device of claim 12 , wherein information stored in the memory element is non-volatile.
17 . The memory device of claim 12 , wherein the nanoscopic wire is a semiconducting nanotube.
18 . An article, comprising:
an electrical crossbar array comprising a first wire disposed adjacent a second wire at a junction, at least one of which is a nanoscopic wire, wherein the second wire is capable of deformable van der Waals contact with the first wire at the junction, upon exposure to a stimulus.
19 . The article of claim 18 , wherein the first wire and the second wire have sufficient adhesion energy to maintain deformable van der Waals contact upon removal of the stimulus.
20 . The article of claim 18 , wherein at least one of the first wire and the second wire is a nanotube.
21 . An article, comprising:
an electrical crossbar array comprising at least two crossed conductors, at least one of which is a nanoscopic wire, wherein the nanoscopic wire is movable between a first position in contact with the second conductor of the at least two conductors, and a second position not in contact with the second conductor.
22 . An article as in claim 21 , wherein the nanoscopic wire is supported above the conductor, relative to a substrate.
23 . An article as in claim 22 , wherein the nanoscopic wire is positioned across a trench in the substrate containing the conductor.