Package substrate
A package substrate has a substrate body on which an electronic component is mounted. The substrate body is formed at its top or back surface with a diamond film, a diamond-like carbon film or a carbon film.
1 . A package substrate comprising a substrate body on which an electronic component is mounted,
at least one of the top and back surfaces of the substrate body being formed with one of a diamond film, a diamond-like carbon film and a carbon film.
2 . The package substrate of claim 1 , wherein
a through hole is formed in the substrate body so as to be filled with a substance having a higher thermal conductivity than a main constituent of the substrate body.
3 . The package substrate of claim 1 , wherein
a heat sink is formed on the back surface of the substrate body.
4 . The package substrate of claim 1 , wherein
said one of the diamond film, the diamond-like carbon film and the carbon film has a thickness of 0.5 μm through 5 μm both inclusive.
5 . The package substrate of claim 1 , wherein
the electronic component is a semiconductor device, and the junction temperature of the semiconductor device under operating conditions exceeds 150° C.
6 . The package substrate of claim 1 , wherein
the electronic component is a semiconductor device including an electrically active layer made of a nitride-based semiconductor or a silicon carbide semiconductor.
7 . A package substrate comprising a substrate body on which an electronic component is mounted,
one of the top and back surfaces of the substrate body being partially formed with a projection for increasing the surface area of the substrate body, and
the projection being covered with one of a diamond film, a diamond-like carbon film and a carbon film.
8 . The package substrate of claim 7 , wherein
a heat sink is formed on the back surface of the substrate body.
9 . The package substrate of claim 7 , wherein
said one of the diamond film, the diamond-like carbon film and the carbon film has a thickness of 0.5 μm through 5 μm both inclusive.
10 . The package substrate of claim 7 , wherein
the electronic component is a semiconductor device, and the junction temperature of the semiconductor device under operating conditions exceeds 150° C.
11 . The package substrate of claim 7 , wherein
the electronic component is a semiconductor device including an electrically active layer made of a nitride-based semiconductor or a silicon carbide semiconductor.
12 . A package substrate comprising a substrate body on which an electronic component is mounted,
one of a diamond film, a diamond-like carbon film and a carbon film being continuously formed to cover the electronic component and the substrate body.
13 . The package substrate of claim 12 , wherein
the electronic component is a semiconductor chip, and
the semiconductor chip is mounted on the substrate body by flip-chip bonding.
14 . The package substrate of claim 12 , wherein
a heat sink is formed on the back surface of the substrate body.
15 . The package substrate of claim 12 , wherein
said one of the diamond film, the diamond-like carbon film and the carbon film has a thickness of 0.5 μm through 5 μm both inclusive.
16 . The package substrate of claim 12 , wherein
the electronic component is a semiconductor device, and the junction temperature of the semiconductor device under operating conditions exceeds 150° C.
17 . The package substrate of claim 12 , wherein
the electronic component is a semiconductor device including an electrically active layer made of a nitride-based semiconductor or a silicon carbide semiconductor.