IP Library Granted Patent US 8,227,795
Granted Patent B2
US 8,227,795 · App. 11/594,903 · Granted Jul 24, 2012

Organic thin film transistor, flat panel display apparatus having the same, and a method of manufacturing organic thin film transistor

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Quick Facts
Patent No.
US 8,227,795
App. No.
11/594,903
Granted
Jul 24, 2012
Kind
B2
Abstract

An organic thin film transistor (TFT) that allows an organic semiconductor layer to be easily patterned includes a gate electrode, source and drain electrodes insulated from the gate electrode, a self-assembly monolayer formed on the source and drain electrodes, an organic semiconductor layer which is insulated from the gate electrode and covers at least a portion of the self-assembly monolayer. A flat panel display apparatus includes the organic TFT. A method of manufacturing an organic TFT includes forming source and drain electrodes on a substrate; forming a self-assembly monolayer covering at least the source and drain electrodes; patterning the self-assembly monolayer to remove portions of the self-assembly monolayer that are not located on the source and drain electrodes; and forming an organic semiconductor layer by inkjet printing an organic semiconductor material between the source and drain electrodes.

Claims (29)

1. An organic thin film transistor (TFT) comprising:

a gate electrode;

source and drain electrodes insulated from the gate electrode;

a self-assembly monolayer formed only on the source and drain electrodes; and

an organic semiconductor layer that is insulated from the gate electrode and is disposed between the source and drain electrodes, wherein,

the entire organic semiconductor layer is formed on a region defined between the source and drain electrodes, and

at least the top surface of the self-assembly monolayer is hydrophobic.

2. The organic TFT of claim 1 , further comprising a substrate and wherein the source and drain electrodes are formed on the substrate.

3. The organic TFT of claim 1 , further comprising a substrate and an insulating layer covering the substrate and wherein the source and drain electrodes are formed on the insulating layer.

4. The organic TFT of claim 1 , further comprising a substrate and a gate insulating film, wherein the gate electrode is formed on the substrate and the gate insulating film is formed covering the gate electrode,

the source and drain electrodes are formed on the gate insulating film, and

the organic semiconductor layer is disposed on the gate insulating film between the source and drain electrodes.

5. The organic TFT of claim 1 , wherein the self-assembly monolayer has a hydrophobic property.

6. The organic TFT of claim 1 , wherein the organic semiconductor layer is formed of a material that comprises at least one of pentacene, tetracene, anthracene, naphthalene, alpha-6-thiophene, alpha-4-thiophene, perylene and its derivatives, rubrene and its derivatives, coronene and its derivatives, perylene tetracarboxylic diimide and its derivatives, perylene tetracarboxylic dianhydride and its derivatives, an oligoacene of naphthalene and its derivatives, an alpha-5-thiophene oligothiophene and its derivatives, phthalocyanine that includes or does not include a metal and its derivatives, naphthalene tetracarboxylic diimide and its derivatives, naphthalene tetracarboxylic dianhydride and its derivatives, pyromelliticdianhydride and its derivatives, pyromellitic diimide and its derivatives, a conjugate polymer that includes thiophene and its derivatives, and a polymer that includes fluorene and its derivatives.

7. The organic TFT of claim 1 , wherein the organic semiconductor layer contacts the self-assembly monolayer on the source and drain electrodes such that the self-assembly monolayer reduces contact resistance between the organic semiconductor layer and the source and drain electrodes.

8. A flat panel display apparatus comprising:

an organic TFT that comprises a gate electrode, source and drain electrodes insulated from the gate electrode, a self-assembly monolayer formed only on the source and drain electrodes, and an organic semiconductor layer which is insulated from the gate electrode and is disposed between the source and drain electrodes; and

a pixel electrode electrically connected to one of the source and drain electrodes of the organic TFT, wherein

the entire organic semiconductor layer is formed on a region defined between the source and drain electrodes, and

at least the top surface of the self-assembly monolayer is hydrophobic.

9. The flat panel display apparatus of claim 8 , wherein the organic TFT further comprises a substrate and wherein the source and drain electrodes are formed on a substrate.

10. The flat panel display apparatus of claim 8 , wherein the organic TFT further comprises a substrate and an insulating layer covering the substrate and wherein the source and drain electrodes are formed on the insulating layer.

11. The flat panel display apparatus of claim 8 , further comprising a substrate and a gate insulating film, wherein the gate electrode is formed on the substrate and the gate insulating film is formed covering the gate electrode,

the source and drain electrodes are formed on the gate insulating film, and

the organic semiconductor layer is disposed on the gate insulating film between the source and drain electrodes.

12. The flat panel display apparatus of claim 8 , wherein the self-assembly monolayer has a hydrophobic property.

13. The flat panel display apparatus of claim 8 , wherein the organic semiconductor layer is formed of a material that comprises at least one of pentacene, tetracene, anthracene, naphthalene, alpha-6-thiophene, alpha-4-thiophene, perylene and its derivatives, rubrene and its derivatives, coronene and its derivatives, perylene tetracarboxylic diimide and its derivatives, perylene tetracarboxylic dianhydride and its derivatives, an oligoacene of naphthalene and its derivatives, an alpha-5-thiophene oligothiophene and its derivatives, phthalocyanine that includes or does not include a metal and its derivatives, naphthalene tetracarboxylic diimide and its derivatives, naphthalene tetracarboxylic dianhydride and its derivatives, pyromelliticdianhydride and its derivatives, pyromellitic diimide and its derivatives, a conjugate polymer that includes thiophene and its derivatives, and a polymer that includes fluorene and its derivatives.

14. The flat panel display apparatus of claim 8 , wherein the pixel electrode electrically connects the organic TFT to an organic light emitting diode (OLED).

15. The flat panel display apparatus of claim 8 , wherein the pixel electrode electrically connects the organic TFT to a liquid crystal display (LCD).

Assignments (3)
MERGER Recorded Aug 29, 2012
From: SAMSUNG MOBILE DISPLAY CO., LTD.
To: SAMSUNG DISPLAY CO., LTD.
Reel/Frame 028868/0314 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 12, 2008
From: SAMSUNG SDI CO., LTD.
To: SAMSUNG MOBILE DISPLAY CO., LTD.
Reel/Frame 022010/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 9, 2006
From: LEE, SANG-MIN; SUH, MIN-CHUL; PARK, YONG-WOO
To: SAMSUNG SDI CO., LTD.
Reel/Frame 018595/0862 →