NROM storage devices based on resonant tunneling
The present invention discloses a resonant tunneling device. Further, the present invention discloses a memory storage device utilizing a resonant tunneling barrier. Moreover, the present invention teaches an SRAM circuit utilizing a resonant tunneling device. Additionally, the present invention teaches an NROM and NAND device utilizing a resonant tunneling barrier.
1 . A NROM storage device comprising:
a top layer,
a resonant tunneling barrier layer,
a small bandgap trapping layer sandwiched between said top layer and said resonant tunneling barrier layer,
a source coupled to said resonant tunneling barrier layer, and
a drain coupled to said resonant tunneling barrier layer.
2 . The device as claimed in claim 1 , wherein said small bandgap trapping layer consists essentially of one of TaO and BTiO.
3 . The device as claimed in claim 1 , wherein said top layer is SiO 2 .
4 . The device as claimed in claim 1 , wherein resonant tunneling barrier comprises:
a first bandgap,
a second bandgap, and
a third bandgap sandwiched between said first bandgap and said second bandgap;
wherein said first bandgap and said second bandgap are larger than said third bandgap.
5 . The device as claimed in claim 4 wherein said first bandgap consists essentially of one of SiO 2 and Al 3 O 4 .
6 . The device as claimed in claim 4 wherein said second bandgap consists essentially of one of SiO 2 and Al 3 O 4 .
7 . The device as claimed in claim 4 wherein said third bandgap consists essentially of one of poly-crystalline silicon, crystalline silicon, Pt, Ir, Ni, Ge, Be, Re, TaO, TaN, BaTiO, BaZrO, ZrO, HfO, TiN, Ti, ZrN, WN, Mo, MoN, and MoSi.
8 . The device as claimed in claim 5 wherein said second bandgap consists essentially of one of SiO 2 and Al 3 O 4 .
9 . The device as claimed in claim 8 wherein said third bandgap consists essentially of one of poly-crystalline silicon, crystalline silicon, Pt, Ir, Ni, Ge, Be, Re, TaO, TaN, BaTiO, BaZrO, ZrO, HfO, TiN, Ti, ZrN, WN, Mo, MoN, and MoSi.