Organic thin film transistor and method of fabricating the same
An organic thin film transistor (OTFT) and a method of fabricating the same are provided in which an organic layer and metal interconnections are formed to have certain linewidths and shapes such that a degradation of device characteristics is prevented. The method includes providing a substrate, forming a gate electrode on the substrate, forming a gate insulating layer on the gate electrode, forming source and drain electrodes on the gate insulating layer, and forming a semiconductor layer on the source and drain electrodes. The gate electrode is formed by an inkjet printing method and ablated by a laser.
1. A method of fabricating an organic thin film transistor (OTFT), the method comprising:
providing a substrate;
forming a gate electrode on the substrate;
forming a gate insulating layer on the gate electrode;
forming separate source and drain electrodes by inkjet printing source and drain electrode materials separately on the gate insulating layer;
trimming respective edges of the separate source and drain electrodes by laser ablation;
patterning a semiconductor layer by inkjet printing a semiconductor material on the source and drain electrodes; and
removing uneven edge portions of the patterned semiconductor layer by laser ablation,
wherein the gate electrode is formed by inkjet printing a gate material and the gate electrode is trimmed by laser ablation after inkjet printing the gate material, and
wherein the inkjet printing performed to form the gate electrode enables the gate electrode to have a patterned shape.
2. The method according to claim 1 , wherein the semiconductor layer includes an organic material.
3. The method according to claim 1 , wherein the semiconductor layer includes a material selected from the group consisting of polythiophene (PT), poly(p-phenylenevinylene) (PPV), poly(p-phenylene) (PPP), polyfluorene (PF), polythiophene vinylene (PTV), polythiophene-heterocyclic aromatic copolymer, pentacene, tetracene, oligoacene of naphthalene, α-6-thiophene, oligothiophene of α-5-thiophene, metal-containing phthalocyanine, metal-free phthalocyanine, pyromelitic dianhydride, pyromelitic diimide, perylene-tetra-carboxylic-dianhydride (PTCDA), perylene tetra-carboxylic di-imide (PTCDI), and derivatives thereof.
4. The method according to claim 1 , wherein the substrate includes a plastic and/or a conductive material.
5. The method according to claim 1 , wherein the gate electrode and the separate source and drain electrodes include a material selected from the group consisting of Al, Cr, Cu, and combinations thereof.
6. The method according to claim 1 , wherein a linewidth of the gate electrode is in a range from about 5 to about 50 μm.