(Meth)acrylate, polymer and resist composition
View Patent ↗A polymer contains a constituent unit having a specific acetal skeleton. This polymer is able to be used as a resist resin in DUV excimer laser lithography, electron beam lithography, EUV lithography, or the like.
1. A copolymer, consisting essentially of:
a constituent unit consisting of a monomer represented by formula (2):
wherein
R represents a hydrogen atom or a methyl group,
R 2 represents an alkyl group having 1 to 20 carbon atoms,
n is 0 or 1, and
one or more units comprising a monomer having a lactone structure in a molecule, and
one or more constituent units comprising a monomer containing an alicyclic skeleton having a hydroxyl group or a cyano group in a molecule.
2. A copolymer, consisting essentially of:
a constituent unit consisting of a monomer represented by formula (2):
wherein
R represents a hydrogen atom or a methyl group,
R 2 represents an alkyl group having 1 to 20 carbon atoms, and
n is 0 or 1, and
one or more constituent units comprising a monomer having a lactone structure in a molecule, and
one or more constituent units comprising a monomer containing an alicyclic skeleton having a hydroxyl group or a cyano group in a molecule, and
one or more constituent units selected from the group consisting of: monomers represented by formulae (6-1), (6-2), (6-4), (6-5), (6-14), (6-15), (6-16), (6-18), (6-57), (6-58), (6-65), (6-66), and (6-67):
wherein R represents a hydrogen atom or a methyl group.
3. A copolymer according to claims 1 or 2 , further comprising one or more constituent units selected from the group consisting of: monomers represented by the formulae (6-22) and (6-64):
wherein R represents a hydrogen atom or a methyl group.
4. A copolymer according to claims 1 or 2 , wherein said one or more constituent units comprising a monomer containing an alicyclic skeleton having a hydroxy group or a cyano group in a molecule are selected from the group consisting of: monomers represented by formulae (6-19) and (6-74):
wherein R represents a hydrogen atom or a methyl group.
5. A resist composition comprising the copolymer according claim 1 .
6. A resist composition comprising the copolymer according claim 2 .
7. A pattern forming method comprising the steps of:
coating the resist composition according to claim 5 on a to-be-processed substrate,
exposing the coated substrate to light having a wavelength of 250 nm or less, and
developing the exposed substrate using a developing solution to form a pattern.
8. A pattern forming method comprising the steps of:
coating the resist composition according to claim 6 on a to-be-processed substrate,
exposing the coated substrate to light having a wavelength of 250 nm or less, and
developing the exposed substrate using a developing solution to form a pattern.