IP Library Granted Patent US 7,869,186
Granted Patent B2
US 7,869,186 · App. 11/598,354 · Granted Jan 11, 2011

High Q and low stress capacitor electrode array

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Quick Facts
Patent No.
US 7,869,186
App. No.
11/598,354
Granted
Jan 11, 2011
Kind
B2
Abstract

An embodiment of the present invention provides a capacitor, including a solid electrode, an electrode broken into subsections with a signal bus lines connecting the subsections; and wherein the signal bus further connects the solid electrode with the electrode broken into subsections.

Claims (24)

1. An apparatus, comprising:

a capacitor including a solid electrode; and

an electrode broken into subsections with signal bus lines connecting said subsections such that the length of a signal path stays the same while an effective width increases thereby creating a reduction in resistance, leading to an increase in Q;

wherein said broken electrode is constructed of a lower resistance metal than said solid electrode and wherein a voltage tunable dielectric material is between said electrodes; and

wherein the voltage tunable dielectric material is a series network of voltage tunable dielectric capacitors which are all tuned using a common tuning voltage.

2. The apparatus of claim 1 , wherein said solid electrode and said broken electrode are adapted to reduce the mechanical stresses generated in metals and dielectric films of said capacitor.

3. The apparatus of claim 1 , wherein said subsections form a diamond shape.

4. The apparatus of claim 1 , wherein said subsections form a plurality of adjacent rectangular shapes.

5. A capacitor, comprising:

a solid electrode;

an electrode broken into subsections with signal bus lines connecting said subsections such that the length of a signal path stays the same while an effective width increases thereby creating a reduction in resistance, leading to an increase in Q;

wherein said broken electrode is constructed of a lower resistance metal than said solid electrode and wherein a voltage tunable dielectric material is between said electrodes;

said capacitor is in a pair of series capacitors and wherein said subsections are arranged in such a manner that it increases the effective width of the signal path in said solid electrode; and

wherein said pair of series capacitors is a series network of voltage tunable dielectric capacitors which are all tuned using a common tuning voltage.

6. The capacitor of claim 5 , wherein said broken electrode distributes the signal across an area of said capacitor and increases the effective width of a signal path through said solid electrode.

7. A capacitor, comprising:

a first electrode;

a second electrode comprising a plurality of subsections connected via signal bus lines, wherein a change of dimensions of a signal path over a length of the signal path creates a reduction in resistance and an increase in Q, wherein the second electrode comprises a lower resistance metal than the first electrode and wherein a voltage tunable dielectric material is between the first and second electrodes;

wherein said capacitor is in a pair of series capacitors and wherein said subsections are arranged in such a manner that it increases the effective width of the signal path in said first electrode; and

wherein said pair of series capacitors is a series network of voltage tunable dielectric capacitors which are all tuned using a common tuning voltage.

8. The capacitor of claim 7 , wherein said subsections form a diamond shape.

9. The capacitor of claim 7 , wherein said subsections form a plurality of adjacent rectangular shapes.

10. The capacitor of claim 7 , wherein the first electrode is adapted to reduce the mechanical stresses generated in metals and dielectric films of the capacitor.

11. The capacitor of claim 7 , wherein the second electrode is adapted to reduce the mechanical stresses generated in metals and dielectric films of the capacitor.

Assignments (6)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 10, 2025
From: NXP B.V.; NXP USA, INC.
To: VELOCITY COMMUNICATION TECHNOLOGIES, LLC
Reel/Frame 070169/0257 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 5, 2020
From: BLACKBERRY LIMITED
To: NXP USA, INC.
Reel/Frame 052095/0443 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 30, 2013
From: RESEARCH IN MOTION RF, INC.
To: RESEARCH IN MOTION CORPORATION
Reel/Frame 030909/0908 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 30, 2013
From: RESEARCH IN MOTION CORPORATION
To: BLACKBERRY LIMITED
Reel/Frame 030909/0933 →
CHANGE OF NAME Recorded Jul 31, 2012
From: PARATEK MICROWAVE, INC.
To: RESEARCH IN MOTION RF, INC.
Reel/Frame 028686/0432 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 13, 2006
From: MARTIN, JAMES
To: PARATEK MICROWAVE, INC.
Reel/Frame 018613/0191 →