Semiconductor device including zinc oxide containing semiconductor film
View Patent ↗To provide a semiconductor device in which a defect or fault is not generated and a manufacturing method thereof even if a ZnO semiconductor film is used and a ZnO film to which an n-type or p-type impurity is added is used for a source electrode and a drain electrode. The semiconductor device includes a gate insulating film formed by using a silicon oxide film or a silicon oxynitride film over a gate electrode, an Al film or an Al alloy film over the gate insulating film, a ZnO film to which an n-type or p-type impurity is added over the Al film or the Al alloy film, and a ZnO semiconductor film over the ZnO film to which an n-type or p-type impurity is added and the gate insulating film.
1. A semiconductor device comprising:
a gate electrode;
a gate insulating film over the gate electrode;
a metal film over the gate insulating film;
a conductive film comprising an oxide over and in contact with the metal film; and
a semiconductor film over and in contact with the conductive film and the gate insulating film,
wherein the conductive film has been etched in a portion over the metal film,
wherein the portion is not in contact with the semiconductor film.
2. The semiconductor device according to claim 1 , wherein the gate insulating film comprises silicon oxide or silicon oxynitride.
3. The semiconductor device according to claim 1 , wherein the conductive film comprises zinc oxide.
4. A liquid crystal display device comprising the semiconductor device according to claim 1 .
5. The semiconductor device according to claim 1 , wherein the metal film includes an Al film or an Al alloy film.
6. The semiconductor device according to claim 1 , wherein the metal film includes a Ti film.
7. The semiconductor device according to claim 1 , wherein the metal film includes a first metal layer comprising aluminum and a second metal layer comprising titanium where the second metal layer contacts the conductive film.
8. The semiconductor device according to claim 1 , further comprising a pixel electrode in direct contact with the metal film.
9. The semiconductor device according to claim 1 , wherein the conductive film further comprises a n-type or p-type impurity.
10. The semiconductor device according to claim 1 , wherein the semiconductor film comprises zinc oxide.
11. A semiconductor device comprising:
a metal film over a substrate;
a conductive film comprising an oxide over and in contact with the metal film;
a semiconductor film over and in contact with the conductive film; and
a gate electrode adjacent to the semiconductor film with a gate insulating film interposed therebetween,
wherein the conductive film has been etched in a portion over the metal film,
wherein the portion is not in contact with the semiconductor film.
12. The semiconductor device according to claim 11 , wherein the gate insulating film comprises silicon oxide or silicon oxynitride.
13. The semiconductor device according to claim 11 , wherein the conductive film comprises zinc oxide.
14. A liquid crystal display device comprising the semiconductor device according to claim 11 .
15. The semiconductor device according to claim 11 , wherein the metal film includes an Al film or an Al alloy film.
16. The semiconductor device according to claim 11 , wherein the metal film includes a Ti film.
17. The semiconductor device according to claim 11 , wherein the metal film includes a first metal layer comprising aluminum and a second metal layer comprising titanium where the second metal layer contacts the conductive film.
18. The semiconductor device according to claim 11 , further comprising a pixel electrode in direct contact with the metal film.
19. The semiconductor device according to claim 11 , wherein the conductive film further comprises a n-type or p-type impurity.
20. The semiconductor device according to claim 11 , wherein the semiconductor film comprises zinc oxide.
21. A semiconductor device comprising:
a gate electrode over a substrate;
a gate insulating film over the gate electrode;
a metal film over the gate insulating film;
a conductive film comprising an oxide over and in contact with the metal film;
a semiconductor film over and in contact with the conductive film and the gate insulating film;
an inorganic film over the semiconductor film; and
an organic resin film over the inorganic film,
wherein the conductive film has been etched in a portion over the metal film,
wherein the portion is not in contact with the semiconductor film.
22. The semiconductor device according to claim 21 , wherein the gate insulating film comprises silicon oxide or silicon oxynitride.
23. The semiconductor device according to claim 21 , wherein the conductive film comprises zinc oxide.
24. A liquid crystal display device comprising the semiconductor device according to claim 21 .
25. The semiconductor device according to claim 21 , wherein the metal film includes an Al film or an Al alloy film.
26. The semiconductor device according to claim 21 , wherein the metal film includes a Ti film.
27. The semiconductor device according to claim 21 , wherein the metal film includes a first metal layer comprising aluminum and a second metal layer comprising titanium where the second metal layer contacts the conductive film.
28. The semiconductor device according to claim 21 , further comprising a pixel electrode in direct contact with the metal film.
29. The semiconductor device according to claim 21 , wherein the conductive film further comprises a n-type or p-type impurity.
30. The semiconductor device according to claim 21 , wherein the semiconductor film comprises zinc oxide.