Light-emitting element having PNPN-structure and light-emitting element array

1. A self-scanning light-emitting element array comprising:

a plurality of first light-emitting thyristors arrayed in one dimension, each thereof serving as a switch;

a plurality of coupling diodes, each coupling diode connecting gate electrodes of two adjacent first light-emitting thyristors; and

a plurality of second light-emitting thyristors arrayed in one dimension, each gate electrode thereof being connected to a gate electrode of the corresponding first light-emitting thyristor;

wherein each of the first and second light-emitting thyristors has a PNPN structure in which a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, a first conductivity-type semiconductor and a second conductivity-type semiconductor layer stacked in this order on a first conductivity-type semiconductor substrate, and wherein each of the first and second light-emitting thyristors includes a gate electrode ohmically contacted to a gate layer of the PNPN structure and at least one Schottky barrier diode structured by a Schottky junction between the gate layer and at least one metal terminal, and

wherein the plurality of coupling-diodes are constituted by ones of the Schottky barrier diodes in the plurality of first light-emitting thyristors.

2. A self-scanning light-emitting element array comprising:

a plurality of first light-emitting thyristors arrayed in one dimension, each thereof serving as a switch;

a plurality of coupling diodes, each coupling diode connecting gate electrodes of two adjacent first light-emitting thyristors;

a power supply voltage line connected to each of the first light-emitting thyristors via a load resistor;

two-phase clock pulse lines connected to every other first light-emitting thyristor, respectively;

a diode for forming a start pulse, the diode connecting one of the two-phase clock pulse lines to a gate electrode of the first light-emitting thyristor to be turned on at a first time; and

a plurality of second light-emitting thyristors arrayed in one dimension, each gate electrode thereof being connected to a gate electrode of the corresponding first light-emitting thyristor;

wherein each of the first and second light-emitting thyristors has a PNPN structure in which a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, a first conductivity-type semiconductor and a second conductivity-type semiconductor layer stacked in this order on a first conductivity-type semiconductor substrate, and wherein each of the first and second light-emitting thyristors includes a gate electrode ohmically contacted to a gate layer of the PNPN structure and at least one Schottky barrier diode structured by a Schottky junction between the gate layer and at least one metal terminal, and

wherein the plurality of coupling-diodes are constituted by ones of the Schottky barrier diodes in the plurality of first light-emitting thyristors and the diode for forming the start pulse is constituted by the Schottky barrier diode in the first light-emitting thyristor to be turned on at the first time.

3. A self-scanning light-emitting element array comprising:

a plurality of first light-emitting thyristors arrayed in one dimension, each thereof serving as a switch;

a plurality of coupling diodes, each coupling diode connecting gate electrodes of two adjacent first light-emitting thyristors;

a power supply voltage line connected to each of the first light-emitting thyristors via a load resistor;

two-phase clock pulse lines connected to every other first light-emitting thyristor, respectively;

a diode-diode logic two-input OR gate or AND gate for connecting the two-phase clock pulse lines to the power supply voltage line; and

a plurality of second light-emitting thyristors arrayed in one dimension, each gate electrode thereof being connected to a gate electrode of the corresponding first light-emitting thyristor;

wherein each of the first and second light-emitting thyristors has a PNPN structure in which a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, a first conductivity-type semiconductor and a second conductivity-type semiconductor layer stacked in this order on a first conductivity-type semiconductor substrate, and wherein each of the first and second light-emitting thyristors includes a gate electrode ohmically contacted to a gate layer of the PNPN structure and at least one Schottky barrier diode structured by a Schottky junction between the gate layer and at least one metal terminal, and

wherein the plurality of coupling-diodes are constituted by ones of the Schottky barrier diodes in the plurality of first light-emitting thyristors and the two-input OR or AND gate is constituted by the Schottky barrier diodes in ones of the first light-emitting thyristors.

4. A self-scanning light-emitting element array comprising:

a plurality of first light-emitting thyristors arrayed in one dimension, each thereof serving as a switch;

a plurality of coupling diodes, each coupling diode connecting gate electrodes of two adjacent first light-emitting thyristors;

a power supply voltage line connected to each of the first light-emitting thyristors via a load resistor;

two-phase clock pulse lines connected to every other first light-emitting thyristor, respectively;

a diode for forming a start pulse, the diode connecting one of the two-phase clock pulse lines to a gate electrode of the first light-emitting thyristor to be turned on at the first time;

a diode-diode logic two-input OR gate or AND gate for connecting the two-phase clock pulse lines to the power supply voltage line; and

a plurality of second light-emitting thyristors arrayed in one dimension, each gate electrode thereof being connected to a gate electrode of the corresponding first light-emitting thyristor;

wherein each of the first and second light-emitting thyristors includes a PNPN structure in which a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, a first conductivity-type semiconductor and a second conductivity-type semiconductor layer stacked in this order on a first conductivity-type semiconductor substrate, and wherein each of the first and second light-emitting thyristors includes a gate electrode ohmically contacted to a gate layer of the PNPN structure and at least one Schottky barrier diode structured by a Schottky junction between the gate layer and at least one metal terminal, and

wherein the plurality of coupling-diodes are constituted by ones of the plurality of Schottky barrier diodes in the plurality of first light-emitting thyristors, and the diode for forming the start pulse, and the two-input OR AND gate are constituted by the Schottky barrier diodes in ones of the plurality of the first light-emitting thyristors.

5. A self-scanning light-emitting element array comprising:

a plurality of first light-emitting thyristors arrayed in one dimension, each thereof serving as a switch;

a plurality of coupling diodes, each coupling diode connecting gate electrodes of two adjacent first light-emitting thyristors;

two-phase clock pulse lines connected to every other first light-emitting thyristor, respectively;

a plurality of second light-emitting thyristors arrayed in one dimension which serve as an memory;

a write line for writing a data into the second light-emitting thyristors,

a plurality of OR gates or AND gates each having two input terminals, each OR gate or AND gate being connected to a gate electrode of the corresponding second light-emitting thyristor;

one of the two input terminals being connected to the write line, and the other thereof being connected to a gate electrode of the corresponding first light-emitting thyristor; and

a plurality of third light-emitting thyristors arrayed in one dimension, each gate electrode thereof being connected to a gate electrode of the corresponding second light-emitting thyristor;

wherein each of the first, second and third light-emitting thyristors has a PNPN structure in which a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer stacked in this order on a first conductivity-type semiconductor substrate, wherein each of the first and second light-emitting thyristors includes a gate electrode ohmically contacted to a gate layer of the PNPN structure and at least one Schottky barrier diode structured by a Schottky junction between the gate layer and at least one metal terminal, and wherein the plurality of coupling diodes, and the OR gate or AND gate are structured by the Schottky barrier diodes of ones of the plurality of first light-emitting thyristors.

6. The self-scanning light-emitting element array according to claim 1 , 2 , 3 or 4 , wherein the self-scanning light-emitting element array operates at 3.0V.

7. The self-scanning light-emitting element array according to claim 5 , wherein the self-scanning light-emitting element array operates at 3.0V.