IP Library Granted Patent US 7,611,920
Granted Patent B1
US 7,611,920 · App. 11/601,223 · Granted Nov 3, 2009

Photonic coupling scheme for photodetectors

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Quick Facts
Patent No.
US 7,611,920
App. No.
11/601,223
Granted
Nov 3, 2009
Kind
B1
Abstract

A room temperature operation polycrystalline infrared responsive photodetector, manufactured by a process, comprising the steps of patterning vacuum-deposited material and dry-etching a photonic crystal structure with resonant coupling tuned to long wavelengths.

Claims (10)

1. A room temperature operation polycrystalline infrared responsive photodetector, manufactured by a process comprising the steps of:

patterning vacuum-deposited material; and

dry-etching a photonic crystal structure with resonant coupling tuned to long wavelengths which are equal to or greater than about 4 microns.

2. The photodetector of claim 1 , wherein the photonic crystal structure is a two-dimensional geometric photonic crystal structure.

3. The photodetector of claim 1 , wherein the photodetector is comprised of an inner lead salt layer, a medically enhanced lifetime lead salt layer, and an outer oxidized surface.

4. The photodetector of claim 3 , wherein the lead salt layers are comprised of lead selenide.

5. The photodetector of claim 3 , wherein the outer oxidized surface is a photon receiving surface.

6. The photodetector of claim 1 , wherein said photodetector has a plurality of transverse apertures and each of said transverse apertures is abutted by an outward oxidized layer and each of said outward oxidized layers is abutted by a further outward enhanced lifetime lead salt layer and each of said enhanced lifetime lead salt layer is abutted by a further outward lead salt layer.

7. The photodetector of claim 6 , wherein the lead salt layers are comprised of lead selenide.

8. The photodetector of claim 6 , wherein photons traveling parallel to the transverse apertures.