In-plane switching mode liquid crystal display device
View Patent ↗An in-plane switching mode liquid crystal display device includes a substrate; at least two gate lines disposed on the substrate; at least two data lines disposed on the substrate crossing the gate lines to define a pixel region; a driving device disposed in the pixel region; a plurality of first electrodes disposed in the pixel region; and a plurality of second electrodes disposed in the pixel region parallel with the first electrodes. At least one first electrode is overlapped with at least one second electrode. Further, each one of the first electrodes and a corresponding one of second electrodes defining an electric field in a direction parallel to a surface of the substrate.
1. A method of fabricating an in-plane switching mode liquid crystal display device, comprising:
providing a substrate;
forming at least two gate lines on the substrate;
forming at least two data lines on the substrate and crossing the gate lines to define a pixel region;
forming a driving device in the pixel region;
forming at least one first line in the pixel region;
forming at least one second line in the pixel region, the first and second lines defining a first storage capacitor and dividing the pixel region into first and second regions;
forming a plurality of first electrodes in the pixel region substantially parallel to the data lines and connected with the first line; and
forming a plurality of second electrodes in the pixel region substantially parallel to the data lines and connected with the second line, the first and second electrodes each having at least two overlap regions to define a second storage capacitor,
wherein the two overlap regions are symmetric with each other and a sum total of the first overlap region and the second overlap region is constant with respect to a mask mis-alignment during formation.
2. The method according to claim 1 , wherein the first line is formed to define a common electrode line, and the second line defines a pixel electrode line.
3. The method according to claim 1 , wherein the first electrodes form at least a portion of a common electrode, and the second electrodes form at least a portion of a pixel electrode.
4. The method according to claim 1 , wherein a capacitance of the second storage capacitor is constant with respect to the mask mis-alignment during formation.
5. The method according to claim 1 , wherein at least one of the first electrodes is formed substantially abutting the data line.
6. The method according to claim 1 , wherein the number of the first electrodes is one greater than the number of the second electrodes.
7. The method according to claim 1 , wherein the driving device is formed to include a thin film transistor.
8. The method according to claim 7 , wherein the thin film transistor includes:
a gate electrode disposed on the substrate;
an insulating layer disposed on the substrate;
a semiconductor layer disposed on the insulating layer;
a source electrode disposed on the semiconductor layer in electrical contact with the semiconductor layer;
a drain electrode disposed on the semiconductor layer in electrical contact with the semiconductor layer; and
a passivation layer over the substrate having the semiconductor layer, source electrode, and the drain electrode.
9. The method according to claim 8 , wherein one of the first electrodes is formed on one of the insulating layer and the passivation layer.
10. The method according to claim 7 , wherein one of the second electrodes is formed on one of the insulating layer and the passivation layer.
11. The method according to claim 1 , wherein positions of one of the first electrodes and the second electrode are alternated in the each of first and second regions.