Method for embedding dies
View Patent ↗A method of manufacturing a semiconductor device is provided, involving forming a first flexible film on a rigid carrier substrate, attaching a die to the flexible film, so as to leave contacts on the die exposed, forming a wiring layer to contact the contacts of the die, and releasing the flexible film where the die is attached, from the carrier. An area of the first flexible film where the die is attached can have a lower adhesion to the rigid carrier substrate than other areas, so that releasing can involve cutting the first flexible film to release a part of the area of lower adhesion, and leaving an area of higher adhesion. A combined thickness of the die, the first flexible film and the wiring layer can be less than 150 μm, so that the device is bendable. Devices can be stacked.
1. A method of manufacturing a semiconductor device, the method comprising the steps of:
forming a first flexible film on a rigid carrier substrate; thereafter
attaching a die to the first flexible film, wherein the die is positioned face-up on the first flexible film so as to leave contacts on the die exposed, and wherein a surface of the die attached to the first flexible film has no contacts; thereafter
forming a wiring layer on the die to contact the contacts of the die while the die is attached to the first flexible film; and thereafter
releasing the first flexible film from the rigid carrier substrate, wherein the first flexible film forms a part of a chip package.
2. The method of claim 1 , further comprising steps of:
forming a second flexible film to cover the die after the die has been attached to the first flexible film; and
forming holes in the second flexible film to leave the contacts exposed.
3. The method of claim 2 , wherein a combined thickness of the die, the first flexible film, the second flexible film, and the wiring layer is less than about 150 μm.
4. The method of claim 1 , further comprising a step of gluing the die to the first flexible film.
5. The method of claim 1 , wherein an area of the first flexible film where the die is attached has a lower adhesion to the rigid carrier substrate than another area of the first flexible film.
6. The method of claim 5 , wherein the step of releasing comprises the step of cutting the first flexible film in the area of lower adhesion so as to release a part of the area of lower adhesion, and so as to leave an area of higher adhesion.
7. The method of claim 2 , further comprising the steps of:
forming at least one recess in at least one of the first flexible layer and second flexible layer, and
situating the die in the recess.
8. The method of claim 1 , wherein the first flexible film comprises a polyimide.
9. The method of claim 1 , wherein the wiring layer comprises a fan-out of wires.
10. A method of manufacturing a semiconductor device, the method comprising the steps of:
forming a first flexible film on a rigid carrier substrate, so that at least one area of the first flexible film has a lower adhesion to the rigid carrier substrate than another area of the flexible film; thereafter
attaching a die to an area of the first flexible film having a lower adhesion to the carrier substrate, wherein the die is positioned face-up on the first flexible film, and wherein a surface of the die attached to the first flexible film has no contacts; and thereafter
releasing the area of the first flexible film having a lower adhesion to the rigid carrier substrate from the carrier substrate, wherein the die and the area of the first flexible film having a lower adhesion to the rigid carrier substrate form a portion of a chip package.
11. A method of manufacturing a stack, the method comprising the steps of:
manufacturing a plurality of semiconductor devices according to the method of claim 1 ; and
arranging the semiconductor devices in a stack with electrical connections between semiconductor devices in the stack.
12. The method of claim 11 , further comprising a step of testing the semiconductor devices after manufacture and before arranging them into a stack.
13. A stack of semiconductor devices prepared according to the method of claim 11 .
14. The method of claim 1 , wherein the chip package is an ultra-thin chip package having a thickness of less than 150 μm.
15. The method of claim 10 , wherein the chip package has a thickness of less than 150 μm.
16. The method of claim 14 , wherein the die is a silicon chip having a thickness of from 20 μm to 30 μm.
17. The method of claim 15 , wherein the die is a silicon chip having a thickness of from 20 μm to 30 μm.
18. A method of manufacturing a semiconductor device, the method comprising the steps of:
forming a first flexible film on a rigid carrier substrate; thereafter
attaching a die to a portion of the first flexible film so as to leave contacts on the die exposed;
forming a wiring layer on the die to contact the contacts of the die; and thereafter
releasing the portion of the first flexible film to which the die is attached from the rigid carrier substrate, wherein the die and the portion of the first flexible film form a portion of a chip package.
19. The method of claim 18 , wherein the die is positioned face-up on the first flexible film.
20. The method of claim 18 , wherein the step of forming a wiring layer to contact the contacts of the die is carried out while the die is attached to the first flexible film.
21. A method of manufacturing a semiconductor device, the method comprising the steps of:
forming a first flexible film on a rigid carrier substrate, so that at least one area of the first flexible film has a lower adhesion to the rigid carrier substrate than another area of the flexible film; thereafter
attaching a die to an area of the first flexible film having a lower adhesion to the carrier substrate; and thereafter
releasing the area of the first flexible film having a lower adhesion to the rigid carrier substrate from the carrier substrate, wherein the die and the area of the first flexible film having a lower adhesion to the rigid carrier substrate form a portion of a chip package.
22. The method of claim 21 , wherein the die is positioned face-up on the first flexible film.