High stability and high capacity precursor vapor generation for thin film deposition

1. A method for generating a gas/vapor mixture for use in thin film deposition, the method comprising:

vaporizing a liquid disposed within a tubular porous metal body, the porous metal body comprising a first surface defining a first carrier gas flow path and a second surface defining a second carrier gas flow path in a substantially opposite direction to the first carrier flow path and at least one slot disposed proximate a lower end of the first surface;

adding vapor generated from the liquid to a carrier gas passing sequentially in direct contact along the first and second surfaces of the porous metal body to form a gas/vapor mixture the carrier gas first flowing generally downwardly along the first surface, through the at least one slot and then generally upwardly along the second surface of the porous metal body; and

providing the gas/vapor mixture for thin film deposition.

2. The method of claim 1 further comprising introducing said gas/vapor mixture into a chamber for deposition on a substrate.

3. The method of claim 1 and further comprising changing a temperature of the carrier gas prior to adding the vapor to the carrier gas.

4. The method of claim 1 further comprising heating the porous metal body.

5. The method of claim 1 further comprising cooling the porous metal body.

6. The method of claim 1 wherein the liquid is disposed within the porous metal body by drawing the liquid into interstitial pores spaces of the porous metal body by capillary action from a volume of the liquid.

7. The method of claim 6 further comprising replenishing the volume of the liquid.

8. The method of claim 7 wherein replenishing the volume of the liquid comprises adding liquid to a reservoir that is in fluid communication with the volume of liquid.

9. The method of claim 6 further comprising controlling a level of the volume of the liquid at a set value.

10. The method of claim 1 wherein the carrier gas passes in direct contact along at least two sides of the porous metal body.

11. The method of claim 10 wherein the porous metal body has a tubular configuration and the at least two sides comprise an inside surface of the porous metal body and an outside surface of the porous metal body.

12. The method of claim 1 wherein the gas/vapor mixture is fully saturated.

13. The method of claim 1 wherein the carrier gas is pressurized.

14. The method of claim 1 further comprising controlling a temperature of the carrier gas at a selected value when the carrier gas is passing in contact along the porous body.