Semiconductor device and method of producing the same

1. A semiconductor device comprising:

a semiconductor substrate having a first surface and a second surface opposite to the first surface;

a first through wiring penetrating through the semiconductor substrate from the first surface to the second surface;

an antenna formed on the first surface and electrically connected to the first through wiring;

a semiconductor element formed on the second surface and electrically connected to the first through wiring;

a first sealing layer formed on the second surface to directly contact with the semiconductor element;

a first external terminal having one end portion exposed from the first sealing layer and the other end portion electrically connected to the semiconductor element; and

an insulation layer formed on the first surface such that the antenna is formed on the insulation layer, said insulation layer being formed of a magnetic material.

2. The semiconductor device according to claim 1 , further comprising a second sealing layer formed on the first surface for covering the antenna, said second sealing layer being formed of a magnetic material.

3. A semiconductor device, comprising:

a semiconductor substrate having a first surface and a second surface opposite to the first surface;

a first through wiring penetrating through the semiconductor substrate from the first surface to the second surface;

an antenna formed on the first surface and electrically connected to the first through wiring;

a semiconductor element formed on the second surface and electrically connected to the first through wiring;

a first sealing layer formed on the second surface to cover the semiconductor element;

a first external terminal having one end portion exposed from the first sealing layer and the other end portion electrically connected to the semiconductor element; and

an insulation layer formed on the first surface such that the antenna is formed on the insulation layer, said insulation layer being formed of a magnetic material.

4. The semiconductor device according to claim 1 , further comprising a conductive layer between the antenna and the semiconductor substrate, said conductive layer being grounded through a specific wiring.

5. The semiconductor device according to claim 4 , further comprising a second through wiring penetrating through the semiconductor substrate from the first surface to the second surface, said conductive layer being grounded through the second through wiring.

6. The semiconductor device according to claim 1 , further comprising a mounting substrate having a second external terminal, and a bump for mechanically fixing and electrically connecting the first external terminal and the second external terminal, said semiconductor substrate being mounted on the mounting substrate through the bump such that the second surface faces the mounting substrate.

7. The semiconductor device according to claim 3 , further comprising a second sealing layer formed on the first surface for covering the antenna, said second sealing layer being formed of a magnetic material.

8. The semiconductor device according to claim 3 , further comprising a conductive layer between the antenna and the semiconductor substrate, said conductive layer being grounded through a specific wiring.

9. The semiconductor device according to claim 8 , further comprising a second through wiring penetrating through the semiconductor substrate from the first surface to the second surface, said conductive layer being grounded through the second through wiring.

10. The semiconductor device according to claim 3 , further comprising a mounting substrate having a second external terminal, and a bump for mechanically fixing and electrically connecting the first external terminal and the second external terminal, said semiconductor substrate being mounted on the mounting substrate through the bump such that the second surface faces the mounting substrate.