IP Library › Patent Application 11607896
Patent Application
App. No. 11/607,896

Nitride-based semiconductor device and method of fabricating the same

Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US None
App. No.
11/607,896
Abstract

A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.

Claims (27)

1 - 27 . (canceled)

28 . A nitride-based semiconductor device comprising:

a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate; and

an n-side electrode formed on the back surface of said first semiconductor layer, wherein

a thickness of said first semiconductor layer is not more than 180 μm, and contact resistance between said n-side electrode and said first semiconductor layer is not more than 0.05 Ωcm 2 .

29 . The nitride-based semiconductor device according to claim 28 , wherein

a thickness of said first semiconductor layer is set to not more than 180 μm by mechanical polishing.

30 . The nitride-based semiconductor device according to claim 28 , wherein

a dislocation density is not more than 1×10 9 cm −2 in the vicinity of the back surface of said first semiconductor layer.

31 . The nitride-based semiconductor device according to claim 28 , wherein

a dislocation density is not more than 1×10 6 cm −2 in the vicinity of the back surface of said first semiconductor layer.

32 . The nitride-based semiconductor device according to claim 28 , wherein

the back surface of said first semiconductor layer includes a nitrogen face of said first semiconductor layer.

33 . The nitride-based semiconductor device according to claim 28 , wherein

said first semiconductor layer includes said n-type nitride-based semiconductor layer or said nitride-based semiconductor substrate consisting of at least one material selected from a group consisting of GaN, BN, AlN, InN and TlN.

34 . The nitride-based semiconductor device according to claim 28 , wherein

said n-side electrode includes an Al film.

35 . The nitride-based semiconductor device according to claim 28 , wherein

said nitride-based semiconductor device is a nitride-based semiconductor light-emitting device.

36 . A nitride-based semiconductor device comprising:

a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate; and

an n-side electrode formed in contact with the back surface of said first semiconductor layer, wherein

a thickness of said first semiconductor layer is not more than 180 μm, and a dislocation density is not more than 1×10 9 cm −2 in the vicinity of the back surface of said first semiconductor layer.

37 . A nitride-based semiconductor device comprising:

a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate; and

an n-side electrode formed in contact with the back surface of said first semiconductor layer, wherein

a thickness of said first semiconductor layer is thinned by mechanical polishing, and a dislocation density is not more than 1×10 9 cm −2 in the vicinity of the back surface of said first semiconductor layer.