Raman spectroscopic apparatus utilizing internal grating stabilized semiconductor laser with high spectral brightness
View Patent ↗A Raman spectroscopic apparatus utilizing a broad stripe semiconductor laser as the excitation light source is provided. The output spectrum of the semiconductor laser is narrowed and stabilized by an internal grating to provide high spectral brightness. A high throughput optical system is also disclosed for Raman scattering signal excitation and extraction, which takes full advantage of the high spectral brightness of the laser source.
1. A spectroscopic apparatus for measuring the Raman spectrum of a physical material, the apparatus comprising:
a broad stripe diode laser with a monolithically integrated narrowband internal grating for producing a laser beam with high spectral and spatial brightness;
an optical system for delivering said laser beam to a physical material to excite a scattered optical signal, and for extracting a Raman scattering signal from the scattered optical signal, said optical system maintains the spatial brightness of said laser beam; and
a spectrograph for measuring the relative intensity of different wavelength components of the Raman scattering signal to obtain a Raman spectrum;
wherein the internal grating acts as a distributed Bragg reflector (DBR) to lock the laser wavelength to a Bragg wavelength set by a period associated with said internal grating and to narrow down a spectral linewidth of the laser.
2. The Raman spectroscopic apparatus of claim 1 , wherein the diode laser has an emission wavelength ranging from that of ultraviolet to infrared.
3. A method for measuring the Raman spectrum of a physical material, the method comprising the steps of:
providing a broad stripe diode laser with a monolithically integrated narrowband internal grating for producing a laser beam with high spectral and spatial brightness;
providing an optical system for delivering said laser beam to a physical material to excite a scattered optical signal, and for extracting a Raman scattering signal from the scattered optical signal, said optical system maintains the spatial brightness of said laser beam; and
providing a spectrograph for measuring the relative intensity of different wavelength components of the Raman scattering signal to obtain a Raman spectrum;
wherein the internal grating acts as a distributed Bragg reflector (DBR) to lock the laser wavelength to a Bragg wavelength set by a period associated with said internal grating and to narrow down a spectral linewidth of the laser.
4. The method of claim 3 , wherein the internal grating acts as a distributed Bragg reflector (DBR) to lock the laser wavelength to a Bragg wavelength set by a period associated with said internal grating and narrowing down the spectral linewidth of the laser.
5. The method of claim 3 , wherein the diode laser has an emission wavelength ranging from that of ultraviolet to infrared.
6. A method for measuring the Raman spectrum of a physical material that exhibits fluorescence, the method comprising the steps of:
providing a plurality of broad stripe diode lasers with internal gratings, said lasers each having slightly shifted laser wavelengths than other lasers among said plurality of broad stripe diode lasers, with the slightly shifted laser wavelengths being determined by slightly shifted Bragg wavelengths of said internal gratings;
obtaining a plurality of Raman/fluorescence spectra from said physical material by using said plurality of broad stripe diode lasers as the excitation light source; and
mathematically manipulating said plurality of Raman/fluorescence spectra to extract a Raman spectrum from said plurality of Raman/fluorescence spectra.
7. The method of claim 6 , wherein the internal gratings act as a distributed Bragg reflector (DBR) to lock the laser wavelength to a Bragg wavelength set by a period associated with said internal grating and narrowing down the spectral linewidth of the lasers.
8. The method of claim 6 , wherein each of the plurality of broad stripe diode lasers has an emission wavelength ranging from that of ultraviolet to infrared.
9. The method of claim 6 , wherein the internal grating is monolithically integrated within the diode laser.