IP Library Granted Patent US 7,687,805
Granted Patent B2
US 7,687,805 · App. 11/609,145 · Granted Mar 30, 2010

Metal wiring, method of forming the metal wiring, display substrate having the metal wiring and method of manufacturing the display substrate

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Quick Facts
Patent No.
US 7,687,805
App. No.
11/609,145
Granted
Mar 30, 2010
Kind
B2
Abstract

In a metal wiring, a method of forming the metal wiring, a display substrate having the metal wiring and a method of manufacturing the display substrate, the metal wiring includes a metal film and a first amorphous carbon film. The metal film is formed on a base substrate using a copper-containing material, and the first amorphous carbon film is formed beneath the metal film. A process for forming the metal wiring including the amorphous carbon film may be greatly simplified, and generation of defects in the metal wiring may be prevented or reduced.

Claims (18)

1. A metal wiring comprising:

a metal film formed on a base substrate, the metal film having a copper-containing material; and

a first amorphous carbon film formed beneath the metal film,

wherein the first amorphous carbon film has substantially the same pattern as the metal film.

2. The metal wiring of claim 1 , wherein the first amorphous carbon film is doped with nitrogen ions.

3. The metal wiring of claim 1 , further comprising a second amorphous carbon film formed on the metal film.

4. The metal wiring of claim 3 , wherein the second amorphous carbon film is doped with nitrogen ions.

5. A display substrate comprising:

a gate line including a gate metal layer having a first low-resistance metal film;

a source line intersected with the gate line, the source line including a source metal layer having an amorphous carbon film and a second low-resistance metal film;

a switching element including a gate electrode extending from the gate line, a source electrode extending from the source line, and a drain electrode having the source metal layer; and

a pixel electrode electrically connected to the drain electrode,

wherein the amorphous carbon film has substantially the same pattern as the second low-resistance metal film.

6. The display substrate of claim 5 , wherein the first and the second low-resistance metal films comprise a copper-containing material.

7. The display substrate of claim 5 , wherein the source metal layer has a double-layered structure including the amorphous carbon film and the second low-resistance metal film on the amorphous carbon film.

8. The display substrate of claim 5 , wherein the source metal layer has a triple-layered structure including a lower amorphous carbon film, the second low-resistance metal film on the lower amorphous carbon film, and an upper amorphous carbon film on the second low-resistance metal film.

9. The display substrate of claim 5 , wherein the switching element further comprises a channel having amorphous silicon.

10. The display substrate of claim 5 , wherein the amorphous carbon film is doped with nitrogen ions.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 17, 2012
From: SAMSUNG ELECTRONICS CO., LTD.
To: SAMSUNG DISPLAY CO., LTD.
Reel/Frame 029045/0860 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 11, 2006
From: SHIM, SEUNG-HWAN; KANG, HO-MIN; MIN, HOON-KEE; HONG, SUNG-SU; PARK, SUN; HEO, SEONG-KWEON
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 018613/0083 →