Thin film transistor array panel and manufacturing method thereof
View Patent ↗A thin film transistor array panel is provided, which includes: a substrate; a first signal line formed on the substrate; a second signal line formed on the substrate and intersecting the first signal line; a thin film transistor including a gate electrode connected to the first signal line and having an edge substantially parallel to the first signal line, a source electrode connected to the second signal line, and a drain electrode overlapping the edge of the gate electrode; and a pixel electrode connected to the drain electrode.
1. A thin film transistor array panel, comprising:
a substrate;
a first signal line formed on the substrate;
a second signal line formed on the substrate and intersecting the first signal line;
a thin film transistor, including a gate electrode connected to the first signal line and having an edge substantially parallel to the first signal line, a source electrode connected to the second signal line and having at least one arm extending in a direction substantially parallel to the second signal line, a drain electrode overlapping the edge of the gate electrode and a semiconductor having a protrusion overlapping the gate electrode, the source electrode and the drain electrode; and,
a pixel electrode connected to the drain electrode,
wherein the pixel electrode and the drain electrode are disposed in different layers on the substrate, and the semiconductor except for the protrusion have the same planar shape as the second signal line.
2. The thin film transistor array panel of claim 1 , wherein the edge of the gate electrode is substantially perpendicular to the second signal line.
3. The thin film transistor array panel of claim 1 , wherein the source electrode partly encloses a portion of the drain electrode.
4. The thin film transistor array panel of claim 3 , wherein the source electrode has an edge that faces the drain electrode and has a shape of hook or horseshoe.
5. The thin film transistor array panel of claim 1 , wherein the source electrode and the drain electrode have edges that face each other and are rectilinear.
6. The thin film transistor array panel of claim 1 , wherein the pixel electrode has a cutout.
7. The thin film transistor array panel of claim 6 , wherein the cutout makes an angle of about 45 degrees with the first signal line.
8. The thin film transistor array panel of claim 7 , wherein the pixel electrode has a chamfered edge parallel to the cutout.
9. The thin film transistor array panel of claim 1 , wherein the pixel electrode has a plurality of cutouts arranged symmetrical with respect to a transverse line bisecting the pixel electrode.
10. The thin film transistor array panel of claim 9 , further comprising a third signal line separated from the first and the second signal lines and overlapping the pixel electrode.
11. The thin film transistor array panel of claim 10 , further comprising a storage electrode connected to the third signal line and overlapping the cutouts.
12. A thin film transistor array panel, comprising:
a substrate;
a first signal line formed on the substrate;
a second signal line formed on the substrate and intersecting the first signal line;
a thin film transistor, including a gate electrode connected to the first signal line and having an edge substantially parallel to the first signal line, a source electrode connected to the second signal line, a drain electrode comprising a first portion substantially parallel to the second signal line and overlapping the edge of the gate electrode, and a second portion extending from the first portion in a different direction than the first portion; and,
a pixel electrode connected to the second portion of the drain electrode,
wherein the pixel electrode and the drain electrode are disposed in different layers on the substrate.
13. The thin film transistor array panel of claim 12 , wherein the second portion is substantially parallel to the first signal line.
14. The thin film transistor array panel of claim 12 , wherein the edge of the gate electrode is substantially perpendicular to the second signal line.
15. The thin film transistor array panel of claim 12 , wherein the source electrode partly encloses a portion of the drain electrode.
16. The thin film transistor array panel of claim 15 , wherein the source electrode has an edge that faces the drain electrode and the shape of a hook or a horseshoe.
17. The thin film transistor array panel of claim 14 , wherein the source electrode and the drain electrode have edges that face each other and are rectilinear.
18. The thin film transistor array panel of claim 12 , wherein the pixel electrode has a cutout.
19. The thin film transistor array panel of claim 18 , wherein the cutout makes an angle of about ±45 degrees with respect to the first signal line.
20. The thin film transistor array panel of claim 18 , wherein the pixel electrode has a chamfered edge disposed substantially perpendicular to the cutout.
21. The thin film transistor array panel of claim 20 , wherein the chamfered edge is located adjacent to a first meeting point of the first portion and the second portion of the drain electrode.
22. The thin film transistor tray panel of claim 21 , wherein a second meeting point of the chamfered edge and an edge of the pixel electrode is located adjacent to the first meeting point.
23. A thin film transistor array panel, comprising:
a substrate;
a first signal line formed on the substrate;
a second signal line formed on the substrate and intersecting the first signal line;
a thin film transistor, including a gate electrode connected to the first signal lint and having an edge substantially parallel to the first signal line, a source electrode connected to the second signal line, a drain electrode comprising a first portion substantially parallel to the second signal line and overlapping the edge of the gate electrode; and,
a pixel electrode connected to the drain electrode and comprising a first cutout extending in a first direction and a second cutout extending in a second direction,
wherein the pixel electrode and the drain electrode are disposed in different layers on the substrate, and wherein the pixel electrode has a chamfered edge substantially perpendicular to the first direction or the second direction.
24. The thin film transistor array panel of claim 23 , wherein the drain electrode further comprises a second portion extending from the first portion in a different direction than the first portion and the pixel electrode connected to the second portion of the drain electrode.
25. The thin film transistor array panel of claim 24 , wherein the chamfered edge is located adjacent to a first meeting point of the first portion and the second portion of the drain electrode.
26. The thin film transistor array panel of claim 25 , further comprising a first storage electrode disposed substantially parallel to the first direction or the second direction.
27. The thin film transistor array panel of claim 26 , further comprising a second storage electrode disposed substantially parallel to the second signal line and electrically connected to the first storage electrode.
28. The thin film transistor array panel of claim 25 , further comprising a first storage electrode disposed substantially parallel to the first signal line.
29. The thin film transistor array panel of claim 25 , wherein the pixel electrode further comprises a third cutout extending in a third direction.
30. The thin film transistor array panel of claim 29 , wherein the first direction and the second direction are about ±45 degrees with respect to the first signal line and the third direction is a direction parallel to the first signal line.