IP Library Granted Patent US 7,951,601
Granted Patent B2
US 7,951,601 · App. 11/614,896 · Granted May 31, 2011

Oxide layers on silicon substrates for effective confocal laser microscopy

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Quick Facts
Patent No.
US 7,951,601
App. No.
11/614,896
Granted
May 31, 2011
Kind
B2
Abstract

Methods of performing confocal laser microscopy on a polymer array disposed on a silicon wafer substrate, the method comprising the steps of providing a silicon wafer substrate having a top side and a bottom side, coating the top side of the silicon wafer with an oxide coating to provide an oxide coated wafer, covalently coupling a plurality of probes to the top side of the coated wafer to provide a fixed polymer array, hybridizing the fixed polymer array with a plurality of labeled ligands, and assaying for one or more hybridized ligands using confocal laser fluorescence microscopy to detect hybridization are provided.

Claims (18)

1. A method of performing confocal laser microscopy on a polymer array disposed on a silicon wafer substrate, the method comprising the steps of:

providing a silicon wafer substrate having a top side and a bottom side;

coating the top side of the substrate with a transparent oxide layer to provide an oxide coated wafer;

depositing a reactive functional group comprising a labile protecting group substantially uniformly across the transparent oxide layer, wherein the labile protecting group is NNPOC or MBPMOC;

selectively removing one or more of the labile protecting groups from predefined regions of the wafer to provide exposed functional groups in the predefined regions;

reacting the exposed functional groups with a nucleic acid comprising a reactive functional group and a labile protecting group;

repeating the steps of selectively removing and reacting to produce the polymer array;

hybridizing the polymer array with a plurality of ligands; and

assaying for one or more hybridized ligands using confocal laser fluorescence microscopy to detect hybridization.

2. The method of claim 1 , wherein the oxide layer has a thickness of at least 3,500 angstroms.

3. The method of claim 1 , wherein the oxide layer has a thickness of at least 35,000 angstroms.

4. The method of claim 1 , wherein the labile protecting group is removed by activating a photoacid generator with light of an appropriate wavelength to produce acid.

5. The method of claim 4 , wherein the photoacid generator is an ionic photoacid generator or a non-ionic photoacid generator.

6. The method of claim 4 , wherein the photoacid generator is an ionic photoacid generator.

7. The method of claim 4 , wherein the photoacid generator is a non-ionic photoacid generator.

8. The method of claim 7 , wherein the non-ionic photoacid generator is 2,6-dinitrobenzyl tosylate.

9. The method of claim 6 , wherein the ionic photoacid generator is an onium salt.

10. The method of claim 9 , wherein the onium salt is bis-(4-t-butyl phenyl) iodonium PF6 − .

Assignments (4)
NOTICE OF RELEASE Recorded Apr 5, 2016
From: BANK OF AMERICA, N.A.
To: AFFYMETRIX, INC.
Reel/Frame 038361/0891 →
RELEASE OF SECURITY INTEREST Recorded Nov 13, 2015
From: GENERAL ELECTRIC CAPITAL CORPORATION, AS AGENT
To: AFFYMETRIX, INC.
Reel/Frame 037109/0132 →
SECURITY INTEREST Recorded Oct 28, 2015
From: AFFYMETRIX, INC.
To: BANK OF AMERICA, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 036988/0166 →
SECURITY AGREEMENT Recorded Jun 27, 2012
From: AFFYMETRIX, INC.
To: GENERAL ELECTRIC CAPITAL CORPORATION, AS AGENT
Reel/Frame 028465/0541 →