Transistor drive circuit of power converter operating in a wide voltage range
View Patent ↗A transistor drive circuit of a power converter is developed for operating in a wide voltage range. It includes an N-type high-side transistor, a P-type high-side transistor and an N-type low-side transistor. A voltage clamp device is connected to the gate of the N-type high-side transistor to limit the maximum output voltage. A detection circuit is coupled to detect the supply voltage of the transistor drive circuit to generate a disable signal in response to the voltage level of the supply voltage. The disable signal is coupled to disable the P-type high-side transistor once the voltage level of the supply voltage is higher than a threshold voltage.
1. A transistor drive circuit of a power converter, comprising:
an input terminal to receive a supply voltage;
an output terminal to output a switching signal for driving a transistor of the power converter;
an N-type high-side transistor having a drain terminal coupled to the input terminal, a source terminal of the N-type high-side transistor coupled to the output terminal;
a P-type high-side transistor having a source terminal coupled to the input terminal, a drain terminal of the P-type high-side transistor coupled to the output terminal;
an N-type low-side transistor having a drain terminal coupled to the output terminal, a source terminal of the N-type low-side transistor coupled to a ground;
a first control circuit coupled to control the gate terminal of the N-type high-side transistor and the gate terminal of the P-type high-side transistor;
a second control circuit coupled to control the gate terminal of the N-type low-side transistor; and
a detection circuit coupled to the supply voltage to generate a disable signal in response to the voltage level of the supply voltage,
wherein the disable signal is transmitted to the first control circuit to disable the P-type high-side transistor once the voltage level of the supply voltage is higher than a threshold voltage.
2. The transistor drive circuit as claimed in claim 1 , further comprising a voltage clamp device coupled to the gate terminal of the N-type high-side transistor to clamp the maximum output voltage of the switching signal.
3. The transistor drive circuit as claimed in claim 1 , wherein the first control circuit and the second control circuit are coupled to receive a control signal for generating the switching signal; the first control circuit and the second control circuit are used to protect the N-type high-side transistor and the N-type low-side transistor from cross-conduction.
4. The transistor drive circuit as claimed in claim 1 , wherein the first control circuit and the second control circuit are further used to protect the P-type high-side transistor and the N-type low-side transistor from cross-conduction.
5. A transistor drive circuit for driving a switching transistor of a power converter, comprising:
an input terminal to receive a supply voltage;
an output terminal to output a switching signal for driving the switching transistor;
a first type-I transistor coupled between the input terminal and the output terminal;
a first type-II transistor coupled between the input terminal and the output terminal;
a second type-I transistor coupled between the output terminal and a ground; and
a control circuit to control the type-I and type-II transistors in response to a control signal, the control circuit comprising:
a first control circuit coupled to control the first type-I end type-II transistors, and
a second control circuit coupled to control the second type-I transistor, the first control circuit and the second control circuit being configured for protecting the first type-I transistor and the second type-I transistor from cross-conduction and for protecting the first type-II transistor and the second type-I transistor from cross-conduction; and
a detection circuit coupled to the supply voltage to generate a disable signal in response to the voltage level of the supply voltage, the disable signal being transmitted to the first control circuit to disable the first type-II transistor once the voltage level of the supply voltage is higher than a threshold voltage.
6. The transistor drive circuit as claimed in claim 5 , wherein the first and second type-I transistors are N-type transistors, and the first type-II transistor is a P-type transistor.
7. The transistor drive circuit as claimed in claim 5 , wherein the first control circuit comprises:
an inverter to invert a signal used for controlling the second type-I transistor;
an AND gate for receiving the control signal and an output of the inverter and outputting a signal to control the first type-I transistor; and
an NAND gate for outputting a signal to control the first type-II transistor in accordance with the disable signal and an output of the AND gate.
8. The transistor drive circuit as claimed in claim 5 , wherein the second control circuit comprises:
a first inverter to invert a signal used for controlling the first type-I transistor to generate a first signal; and
an AND gate for outputting a signal to control the second type-I transistor in accordance with the control signal and the first signal.
9. The transistor drive circuit as claimed in claim 5 , further comprising a voltage clamp device coupled to the gate terminal of the first type-I transistor to clamp the maximum output voltage of the switching signal.