IP Library Granted Patent US 7,579,602
Granted Patent B2
US 7,579,602 · App. 11/615,317 · Granted Aug 25, 2009

Ion implantation with a collimator magnet and a neutral filter magnet

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,579,602
App. No.
11/615,317
Granted
Aug 25, 2009
Kind
B2
Abstract

This disclosure describes an ion implanter having a collimator magnet that is configured to shape an ion beam. A first deceleration stage is configured to manipulate energy of the ion beam shaped by the collimator magnet. A neutral filter magnet is configured to filter neutral atoms from the ion beam passing through the first deceleration stage.

Claims (21)

1. An ion implanter, comprising:

a collimator magnet configured to shape an ion beam;

a first deceleration stage positioned downstream of the collimator magnet and configured to manipulate energy of the ion beam shaped by the collimator magnet; and

a neutral filter magnet positioned downstream of the first deceleration stage and configured to filter neutral atoms from the ion beam emerging from the first deceleration stage.

2. The ion implanter of claim 1 , wherein the collimator magnet comprises a quadrupole magnet.

3. The ion implanter of claim 1 , wherein the collimator magnet comprises a dipole magnet configured to have a pole rotation that produces a parallel beam output.

4. The ion implanter of claim 1 , wherein the collimator magnet comprises a shaped dipole field.

5. The ion implanter of claim 1 , wherein the neutral filter magnet comprises a dipole magnet.

6. The ion implanter of claim 1 , wherein the ion beam comprises a ribbon beam or a scanning spot beam.

7. The ion implanter of claim 1 , further comprising a second deceleration stage configured to manipulate the energy of the ion beam filtered by the neutral filter magnet.

8. A method of ion implantation, comprising:

generating an ion beam;

shaping the ion beam into a parallel ribbon beam at a first position;

manipulating energy of the shaped parallel ion beam at a second position downstream of the first position; and

filtering neutral atoms from the parallel ion beam at a third position downstream of the second position.

9. The method of claim 8 , wherein the shaping of the ion beam into the parallel ribbon beam comprises using a collimator magnet.

10. The method of claim 8 , wherein the shaping of the ion beam into the parallel ribbon beam comprises receiving the ion beam with a diverging fan beam, bending an upper part of the diverging ion beam in a downward direction and bending a lower part of the diverging ion beam in an upper direction.

11. The method of claim 8 , wherein the manipulating of energy comprises using a deceleration stage.

12. The method of claim 8 , wherein the filtering of neutral atoms from the ion beam comprises using a neutral filter magnet.

13. The method of claim 9 , further comprising manipulating the energy of the filtered ion beam.

14. The method of claim 13 , wherein the manipulating of energy of the filtered ion beam comprises using a deceleration stage.

Assignments (2)
SECURITY AGREEMENT Recorded Dec 4, 2009
From: APPLIED PLASMONICS, INC.
To: V.I. FOUNDERS, LLC
Reel/Frame 023594/0877 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 2, 2007
From: BENVENISTE, VICTOR M.; CAMPBELL, CHRISTOPHER W.; SINCLAIR, FRANK
To: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. (VSEA)
Reel/Frame 018698/0219 →