Semiconductor device and method of manufacturing the same
View Patent ↗A semiconductor device according to the present invention comprises a semiconductor substrate, a capacitor including a lower electrode disposed above the semiconductor substrate, a dielectric film disposed above the lower electrode, and an upper electrode disposed above the dielectric film, the upper electrode including metal oxide formed of ABO 3 perovskite oxide and containing at least an Ru element as a B site element, and a metal film containing a Ti element being disposed between the dielectric film and the upper electrode.
1. A semiconductor device comprising: a semiconductor substrate; and a capacitor including a lower electrode disposed above the semiconductor substrate, a dielectric film disposed above the lower electrode, and an upper electrode disposed above the dielectric film; the upper electrode including metal oxide formed of ABO 3 perovskite oxide and containing at least an Ru element and a Ti element as B site elements.
2. The semiconductor device according to claim 1 , wherein the dielectric film contains at least Pb.
3. The semiconductor device according to claim 1 , wherein metal oxide is at least one of Sr(Ru, Ti)O 3 and Ba(Ru, Ti)O 3 .
4. The semiconductor device according to claim 1 , wherein the capacitor includes a ferroelectric substance and has a nonvolatile memory function.