Organic light emitting diode display and manufacturing method thereof

1. An organic light emitting diode display, comprising:

a substrate;

a gate line formed on the substrate;

a secondary gate line substantially parallel to the gate line;

a plurality of control electrodes each connected to one of the gate line and the secondary gate line;

a data line intersecting the gate line and the secondary gate line;

a switching thin film transistor (TFT) connected to the gate line and the data line, the switching TFT comprising the plurality of control electrodes, which include a first control electrode connected to the gate line and a secondary control electrode connected to the secondary gate line;

a driving TFT connected to the switching TFT;

a first electrode connected to the driving TFT;

a second electrode facing the first electrode; and

a light emitting member formed between the first electrode and the second electrode,

wherein the gate line and the secondary gate line are formed on different layers from each other and are electrically separated from each other,

wherein the secondary control electrode includes a first secondary control electrode and a second secondary control electrode, and

wherein the first control electrode is located between the first secondary control electrode and the second secondary control electrode and partially overlaps them.

2. The organic light emitting diode display of claim 1 , wherein the secondary control electrode is formed below the first control electrode.

3. The organic light emitting diode display of claim 1 , wherein the first control electrode and the secondary control electrode are electrically insulated from each other.

4. The organic light emitting diode display of claim 1 , wherein the switching TFT includes a polycrystalline semiconductor.

5. The organic light emitting diode display of claim 1 , wherein the driving TFT includes a polycrystalline semiconductor.

6. The organic light emitting diode display of claim 1 , wherein the secondary gate line is supplied with a voltage different from that of the gate line.

7. The organic light emitting diode display of claim 1 , wherein the secondary gate line is floating when the gate line is supplied with a gate-off voltage.

8. The organic light emitting diode display of claim 1 , further comprising:

an input electrode connected to the data line and an output electrode facing the input electrode,

wherein the input electrode and the output electrode partially overlap the secondary control electrode.

9. The organic light emitting diode display of claim 8 , wherein the input electrode and the output electrode are separated from the first control electrode.

10. An organic light emitting diode display, comprising:

a substrate;

a gate line formed on the substrate and including a first control electrode;

a secondary gate line electrically insulated from the gate line and including a secondary control electrode;

a first semiconductor partially overlapping the secondary control electrode and the first control electrode;

a data line intersecting the gate line and the secondary gate line and including a first input electrode;

a first output electrode facing the first input electrode;

a second control electrode connected to the first output electrode;

a second semiconductor formed on the second control electrode;

a second input electrode and a second output electrode partially overlapping the second semiconductor;

a first electrode connected to the second output electrode;

a second electrode spaced apart from and facing the first electrode relative to the substrate; and

a light emitting member formed between the first electrode and the second electrode,

wherein the gate line and the secondary gate line are formed on different layers from each other and are electrically insulated from each other,

wherein the first control electrode and the secondary control electrode are formed on different layers from each other and partially overlap each other, and

wherein the first control electrode, the secondary control electrode, the first semiconductor, the first input electrode, and the first output electrode form one thin film transistor,

wherein the secondary control electrode includes a first secondary control electrode and a second secondary control electrode, and

wherein the first control electrode is located between the first secondary control electrode and the second secondary control electrode and partially overlaps them.

11. The organic light emitting diode display of claim 10 , wherein the first semiconductor and the second semiconductor include a polycrystalline semiconductor.

12. The organic light emitting diode display of claim 10 , further comprising:

a first gate insulating layer formed between the secondary gate line and the gate line; and

a second gate insulating layer formed between the gate line and the data line.

13. A method of manufacturing an organic light emitting diode display, comprising:

forming a secondary gate line including a secondary control electrode on a substrate;

forming a first gate insulating layer on the secondary gate line and the substrate;

forming a gate line including a first control electrode, and the second control electrode on the first gate insulating layer;

forming a second gate insulating layer and a semiconductor layer on the gate line, the second control electrode and the first gate insulating layer;

crystallizing the semiconductor layer;

forming data conductors including a data line including a first input electrode, a driving voltage line including a second input electrode and a plurality of output electrodes on the crystallized semiconductor layer;

forming a first electrode connected to one of the plurality of output electrodes;

forming a light emitting member on the first electrode; and

forming a second electrode on the light emitting member, wherein the first control electrode and the secondary control electrode are formed on different layers from each other and partially overlap each other,

wherein the gate line and the secondary gate line are formed on different layers from each other and are electrically separated from each other,

wherein the first control electrode, the secondary control electrode, the first semiconductor, the first input electrode, and the first output electrode form one thin film transistor,

wherein the secondary control electrode includes a first secondary control electrode and a second secondary control electrode,

wherein the first control electrode is located between the first secondary control electrode and the second secondary control electrode and partially overlaps them.

14. The method of claim 13 , wherein the crystallization of the semiconductor layer is performed using solid phase crystallization.

15. The method of claim 13 , wherein an ohmic contact layer is simultaneously formed on the semiconductor layer in the forming of the second gate insulating layer and the semiconductor layer.