Liquid crystal display device and manufacturing method thereof

1. A display device, comprising:

a plurality of subpixel regions, each subpixel region divided into first and second gray scale regions;

a first pixel electrode formed in the first gray scale region; and

a second pixel electrode formed in the second gray scale region separated from the first pixel electrode and encompassed by the first pixel electrode,

wherein the second pixel electrode includes wings symmetrically slanted about a short side direction of the subpixel region.

2. The display device of claim 1 , further comprising:

a first thin film transistor connected to the first pixel electrode;

a second thin film transistor connected to the second pixel electrode; and

a gate line and a data line connected to the first and second thin film transistors, for defining each subpixel region.

3. The display device of claim 2 , wherein the first pixel electrode comprises:

an upper electrode formed at an upper part of the second pixel electrode;

a lower electrode formed at a lower part of the second pixel electrode;

a center electrode formed between the wings of the second pixel electrode;

a first connection line connecting the upper electrode to the center electrode;

a second connection line connecting the lower electrode to the center electrode; and

a third connection line for connecting the upper and lower electrodes to each other.

4. The display device of claim 3 , further comprising a first slit separating the first and second pixel electrodes from each other.

5. The display device of claim 4 , wherein the first slit has a given width along a lateral side of the second pixel electrode and the first slit encompasses the second pixel electrode.

6. The display device of claim 4 , further comprising second slits formed at the upper and lower electrodes of the first pixel electrode, the second slits in parallel with the first slit.

7. The display device of claim 3 , wherein the first and second connection electrodes of the first pixel electrode are formed between the second pixel electrode and a data line adjacent to one side of the second pixel electrode, and the third connection electrode is formed between the second pixel electrode and a data line adjacent to the other side of the second pixel electrode.

8. The display device of claim 7 , wherein the third connection electrode reduces the difference in length between one lateral side of the first pixel electrode adjacent to a data line on one side and the other lateral side of the first pixel electrode adjacent to a data line on the other side.

9. The display device of claim 7 , wherein an interval between one side of the second pixel electrode and the adjacent data line is identical to that between the other side of the second pixel electrode and the adjacent data line.

10. The display device of claim 3 , further comprising a storage line formed along a short side direction of the subpixel region and overlapped by the first and second pixel electrodes.

11. The display device of claim 10 , further comprising:

a first storage capacitor formed such that a first drain electrode extending from the first thin film transistor and connected to the first pixel electrode overlaps the storage line with an insulating layer disposed therebetween; and

a second storage capacitor formed such that a second drain electrode extending from the second thin film transistor and connected to the second pixel electrode overlaps the storage line with the insulating layer disposed therebetween.

12. The display device of claim 10 , further comprising:

an organic insulating layer covering the first and second thin film transistors, formed under the first and second pixel electrodes; and

a common line formed on the organic insulating layer and overlapped by the gate line and the data line.

13. The device of claim 1 , further comprising:

a thin film transistor connected to the second pixel electrode;

a coupling capacitor formed at an overlapping part of a drain electrode of the thin film transistor and the first pixel electrode; and

a gate line and a data line connected to the thin film transistor, for defining each subpixel region.

14. The display device of claim 13 , wherein the first pixel electrode comprises:

an upper electrode formed at an upper part of the second pixel electrode;

a lower electrode formed at a lower part of the second pixel electrode;

a center electrode formed between the wings of the second pixel electrode;

a first connection line connecting the upper electrode to the center electrode;

a second connection line connecting the lower electrode to the center electrode; and

a third connection line for connecting the upper and lower electrodes to each other.

15. The display device of claim 14 , further comprising a storage line formed along a short side direction of the subpixel region and overlapped by the first and second pixel electrodes.

16. The display device of claim 15 , further comprising a storage capacitor formed such that the drain electrode extending from the thin film transistor and connected to the second pixel electrode overlaps the storage line with a first insulating layer disposed therebetween, wherein the coupling capacitor is formed such that the drain electrode extending from the thin film transistor is overlapped by the first pixel electrode with a second insulating layer disposed therebetween.

17. A method of manufacturing a display device, the method comprising:

dividing each subpixel region of a plurality of subpixel regions into first and second gray scale regions;

forming a first pixel electrode formed in the first gray scale region of each subpixel region; and

forming a second pixel electrode formed in second gray scale region separated from the first pixel electrode and encompassed by the first pixel electrode,

wherein the second pixel electrode includes wings symmetrically slanted relative to a short side direction of the subpixel region.

18. The method of claim 17 , further comprising forming a first thin film transistor connected to the first pixel electrode, a second thin film transistor connected to the second pixel electrode, and a gate line and a data line connected to the first and second thin film transistors, for defining each subpixel region.

19. The method of claim 17 , further comprising forming a thin film transistor connected to the second pixel electrode, a coupling capacitor formed at an overlapping part of a drain electrode of the thin film transistor and the first pixel electrode, and a gate line and a data line connected to the thin film transistor, for defining each subpixel region.

20. The method of 17 , wherein the first pixel electrode comprises an upper electrode formed at an upper part of the second pixel electrode, a lower electrode formed at a lower part of the second pixel electrode, a center electrode formed between the wings of the second pixel electrode, a first connection line for connecting the upper electrode to the center electrode, a second connection line for connecting the lower electrode to the center electrode, and a third connection line for connecting the upper and lower electrodes to each other.

21. The method of claim 20 , further comprising forming a first slit separating the first and second pixel electrodes from each other, wherein the first slit has a given width along a lateral side of the second pixel electrode and is separated from the second pixel electrode by the first slit encompassing the second pixel electrode.

22. The method of claim 21 , further comprising forming second slits at the upper and lower electrodes of the first pixel electrode in parallel with the first slit.

23. The method of claim 20 , wherein the first and second connection electrodes of the first pixel electrode are formed between the second pixel electrode and a data line adjacent to one side of the second pixel electrode, and the third connection electrode is formed between the second pixel electrode and a data line adjacent to the other side of the second pixel electrode.

24. The method of claim 20 , further comprising forming a storage line formed along a short side direction of the subpixel region and overlapped by the first and second pixel electrodes.

25. The method of claim 24 , further comprising:

forming a first storage capacitor by overlapping the storage line with a first drain electrode extending from the first thin film transistor and connected to the first pixel electrode with an insulating layer disposed therebetween; and

forming a second storage capacitor by overlapping the storage line with a second drain electrode extending from the second thin film transistor and connected to the second pixel electrode with the insulating layer disposed therebetween.

26. The method of claim 24 , further comprising forming a storage capacitor by overlapping the storage line with the drain electrode extending from the thin film transistor and connected to the second pixel electrode with a first insulating layer disposed therebetween, wherein the coupling capacitor is formed such that the drain electrode extending from the thin film transistor is overlapped by the first pixel electrode with a second insulating layer disposed therebetween.

27. The method of claim 24 , further comprising forming a common line overlapping the gate line and the data line with the insulating layer disposed therebetween.