Semiconductor element mounting board and optical transmission module
View Patent ↗An optical transmission module of the invention uses a semiconductor chip forming an optical modulator integrated laser on a semi-insulating semiconductor board. An input transfer line and an anode electrode of an optical modulator element are connected by a first bonding wire. The anode electrode of the optical modulator element and one of the ends of a terminal resistor element are connected by a second bonding wire. A cathode electrode of the optical modulator element and the other end of the terminal resistor element are connected by a third bonding wire. The cathode electrode of the optical modulator element and a ground electrode are connected by a fourth bonding wire. A joint portion between the first bonding wire and the input transfer line is arranged on an opposite side to a joint portion between the fourth bonding wire and the ground electrode while interposing the semiconductor chip between them.
1. An optical transmission module using a carrier board to which an optical modulator integrated laser element having an optical modulator equipped with an anode electrode and a cathode electrode on a surface of an element and a semiconductor laser is mounted and in which a ground electrode and a pattern electrode of an input transfer line for inputting an electric signal to said optical modulator are formed on a surface of said board, comprising:
a first bonding wire for connecting the pattern electrode of said input transfer line and the anode electrode of said optical modulator;
a second bonding wire for connecting the anode electrode of said optical modulator and a first electrode of said terminal resistor;
a third bonding wire for connecting the cathode electrode of said optical modulator and a second electrode of said terminal resistor; and
a fourth bonding wire for connecting the cathode electrode of said optical modulator and said ground electrode.
2. An optical transmission module according to claim 1 , wherein a joint portion of said first bonding wire and the pattern electrode of said input transfer line and a joint portion of said fourth bonding wire and said ground electrode are positioned on both sides interposing said optical modulator integrated laser element between them.
3. An optical transmission module according to claim 1 , wherein said optical modulator is arranged on said ground electrode or on the pattern electrode of said input transfer line.
4. An optical transmission module according to claim 1 , wherein said second bonding wire and said third bonding wire are arranged adjacent to, and substantially in parallel with, each other.
5. An optical transmission module according to claim 1 , wherein a bit rate of said electric signal is from 9.95 Gbit/s to 11.3 Gbit/s.
6. An optical transmission module according to claim 1 , wherein a semiconductor laser and an optical modulator element of said optical modulator integrated laser element are driven by a power source having a single polarity.
7. An optical transmission module using a carrier board to which an optical modulator integrated laser element having an optical modulator equipped with an anode electrode and a cathode electrode on a surface of an element and a semiconductor laser is mounted and in which a ground electrode, a pattern electrode of an input transfer line for inputting an electric signal to said optical modulator and a terminal resistor for the electric signal inputted are formed on a surface of said board, comprising:
a first bonding wire for connecting the pattern electrode of said input transfer line and the cathode electrode of said optical modulator;
a second bonding wire for connecting the cathode electrode of said optical modulator and a first electrode of said terminal resistor;
a third bonding wire for connecting the anode electrode of said optical modulator to a second electrode of said terminal resistor; and
a fourth bonding wire for connecting the anode electrode of said optical modulator and said ground electrode.
8. An optical transmission module according to claim 7 , wherein a joint portion of said first bonding wire and the pattern electrode of said input transfer line and a joint portion of said fourth bonding wire and said ground electrode are positioned on both sides interposing said optical modulator integrated laser element between them.
9. An optical transmission module according to claim 7 , wherein said optical modulator is arranged on said ground electrode or on the pattern electrode of said input transfer line.
10. An optical transmission module according to claim 7 , wherein said second bonding wire and said third bonding wire are arranged adjacent to, and substantially in parallel with, each other.
11. An optical transmission module according to claim 7 , wherein a bit rate of said electric signal is from 9.95 Gbit/s to 11.3 Gbit/s.
12. An optical transmission module according to claim 7 , wherein a semiconductor laser and an optical modulator element of said optical modulator integrated laser element are driven by a power source having a single polarity.
13. An optical transmission module using a carrier board to which an optical modulator integrated laser element having an optical modulator equipped with an anode electrode and a cathode electrode on a surface of an element and a semiconductor laser is mounted and in which a ground electrode, a pattern electrode of a first input transfer line for inputting differential electric signals to said optical modulator, a pattern electrode of a second transfer line and a terminal resistor for the electric signals inputted to said first transfer line and said second transfer line are formed on a surface of said board, comprising:
a first bonding wire for connecting the pattern electrode of said first input transfer line and the cathode electrode of said optical modulator;
a second bonding wire for connecting the cathode electrode of said optical modulator and a first electrode of said terminal resistor;
a third bonding wire for connecting the anode electrode of said optical modulator to a second electrode of said terminal resistor; and
a fourth bonding wire for connecting the anode electrode of said optical modulator and said pattern electrode of said second input transfer line.
14. An optical transmission module according to claim 13 , wherein a joint portion of said first bonding wire and the pattern electrode of said first input transfer line and a joint portion of said fourth bonding wire and said ground electrode are positioned on both sides interposing said optical modulator integrated laser element between them.
15. An optical transmission module according to claim 13 , wherein said optical modulator is arranged on the pattern electrode of said first transfer line or on the pattern electrode of said second input transfer line.
16. An optical transmission module according to claim 13 , wherein said second bonding wire and said third bonding wire are arranged adjacent to, and substantially in parallel with, each other.
17. An optical transmission module according to claim 13 , wherein a bit rate of said electric signal is from 9.95 Gbit/s to 11.3 Gbit/s.
18. An optical transmission module according to claim 13 , wherein a semiconductor laser and an optical modulator element of said optical modulator integrated laser element are driven by a power source having a single polarity.