Wires for liquid crystal display and liquid crystal display having the same

1. A manufacturing method of a molybdenum-metal alloy nitride layer by a reactive sputtering using argon gas and nitrogen gas as a reactive gas mixture:

wherein a target for the reactive sputtering is made of molybdenum alloy comprising a metal of 0.1 to less than 20 atm %, and inflow amount of the nitrogen gas is at least 50% of the inflow amount of the argon gas.

2. The method of the claim 1 , wherein the metal is one selected from the group consisting of tungsten, chromium, zirconium and nickel.

3. A molybdenum-metal alloy nitride layer manufactured by the method of claim 2 .

4. A manufacturing method of a wire for a liquid crystal display comprising the steps of:

depositing a first layer made of either molybdenum or molybdenum alloy on a substrate;

depositing a second layer made of either molybdenum nitride or molybdenum alloy nitride by using reactive sputtering; and,

patterning simultaneously the second and the first layers.

5. The manufacturing method of claim 4 , wherein a target for the reactive sputtering is made of either molybdenum or molybdenum alloy, and

the molybdenum alloy comprises one selected from tungsten, chromium, zirconium and nickel of 0.1 to less than 20 atm %.

6. The manufacturing method of claim 5 , wherein a reactive gas mixture for the reactive sputtering includes argon gas and nitrogen gas, and the inflow amount of the nitrogen gas is at least 50% of the inflow amount of the argon gas.

7. The manufacturing method of claim 6 , wherein the thickness of the second layer is 300 Å to 1,000 Å.

8. A method for manufacturing a wire for a liquid crystal display, the method comprising:

depositing a first layer on a substrate using reactive sputtering, the first layer being made of either molybdenum nitride or molybdenum alloy nitride;

depositing a second layer on the substrate, the second layer being made of either molybdenum or a molybdenum alloy; and

simultaneously patterning the second and the first layers.

9. The manufacturing method of claim 8 , wherein a target for the reactive sputtering is made of either molybdenum or molybdenum alloy, and,

the molybdenum alloy comprises one selected from tungsten, chromium, zirconium and nickel of 0.1 to less than 20 atm %.

10. The manufacturing method of claim 9 , wherein a reactive gas mixture for the reactive sputtering includes argon gas and nitrogen gas, and the nitrogen gas inflow amount of the nitrogen gas is at least 50% of the inflow amount of the argon gas.

11. The manufacturing method of claim 10 , wherein the thickness of the first layer is 300 Å to 1,000 Å.

12. A manufacturing method of a liquid crystal display comprising the steps of:

forming a gate wire on a substrate;

forming a gate insulating layer on the gate wire;

forming a semiconductor layer on the gate insulating layer;

depositing a first layer made of either molybdenum or molybdenum alloy;

depositing a second layer made of either molybdenum nitride or molybdenum alloy nitride by reactive sputtering method;

patterning simultaneously the second layer and the first layer to form a data wire and a supplementary data wire;

forming a passivation layer on the data wire or the supplementary data wire; and

forming a pixel electrode made of ITO.

13. The manufacturing method of claim 12 , wherein a target for the reactive sputtering is made of either molybdenum or molybdenum alloy, and

the molybdenum alloy comprises one selected from tungsten, chromium, zirconium and nickel of 0.1 to less than 20 atm %.

14. The manufacturing method of claim 13 , wherein a reactive gas mixture for the reactive sputtering includes argon gas and nitrogen gas, and the nitrogen gas inflow amount of the nitrogen gas is at least 50% of the inflow amount of the argon gas.