Method for manufacturing a semiconductor device having doped and undoped polysilicon layers
View Patent ↗Various illustrative embodiments of methods for manufacturing a semiconductor device are described. These methods may include, for example, forming a first polysilicon layer above a substrate, wherein the first polysilicon layer comprises a doped portion, and forming a second polysilicon layer over a surface of the first polysilicon layer. Also, various illustrative embodiments of semiconductor devices are described that may be manufactured such as by the various methods described herein.
1. A method for manufacturing a semiconductor device, comprising:
forming a first polysilicon layer above a substrate, wherein the first polysilicon layer comprises a doped portion of the first polysilicon layer disposed directly on an undoped portion of the first polysilicon layer; and
forming a second polysilicon layer directly on a surface of the first polysilicon layer.
2. The method of claim 1 , comprising:
etching the second polysilicon layer using a first etchant;
etching the doped portion of the first polysilicon layer using a second etchant; and
etching the undoped portion of the first polysilicon layer using a third etchant.
3. The method of claim 2 , wherein the second etchant is different from both the first etchant and the third etchant.
4. The method of claim 3 , wherein at least one of the first etchant and the third etchant comprises HBr.
5. The method of claim 4 , wherein the second etchant comprises a fluorine-based etchant.
6. A method for manufacturing a semiconductor device, comprising:
forming a first polysilicon layer above a substrate, wherein the first polysilicon layer comprises a directly on non-doped portion; and
forming a second polysilicon layer directly on a surface of the first polysilicon layer,
wherein forming the first polysilicon layer comprises forming the first polysilicon layer to have a first thickness, and wherein forming the second polysilicon layer comprises forming the second polysilicon layer to have a second thickness that is equal to or less than the first thickness.
7. The method of claim 1 , wherein forming the first polysilicon layer comprises forming the doped portion by implanting ions into the first polysilicon layer.
8. The method of claim 1 , comprising annealing the first polysilicon layer and the second polysilicon layer.
9. The method of claim 6 , wherein the first polysilicon layer further comprises an undoped portion, the doped portion of the first polysilicon layer being disposed over the undoped portion of the first polysilicon layer.
10. The method of claim 6 , further comprising:
etching the second polysilicon layer using a first etchant;
etching the doped portion of the first polysilicon layer using a second etchant; and
etching an undoped portion of the first polysilicon layer using a third etchant.
11. The method of claim 10 , wherein the second etchant is different from both the first etchant and the third etchant.
12. The method of claim 11 , wherein at least one of the first etchant and the third etchant comprises HBr.
13. The method of claim 12 , wherein the second etchant comprises a fluorine-based etchant.
14. The method of claim 6 , wherein forming the first polysilicon layer comprises forming the doped portion by implanting ions into the first polysilicon layer.
15. A method for manufacturing a semiconductor device, comprising:
forming a first polysilicon layer above a substrate, wherein the first polysilicon layer comprises a doped portion of the first polysilicon layer disposed directly on an undoped portion of the first polysilicon layer; and
forming a second polysilicon layer directly on the doped portion of the first polysilicon layer.
16. The method of claim 15 , further comprising:
etching the second polysilicon layer using a first etchant;
etching the doped portion of the first polysilicon layer using a second etchant; and
etching the undoped portion of the first polysilicon layer using a third etchant.
17. The method of claim 15 , wherein the second etchant is different from both the first etchant and the third etchant.
18. The method of claim 17 , wherein at least one of the first etchant and the third etchant comprises HBr.
19. The method of claim 18 , wherein the second etchant comprises a fluorine-based etchant.
20. The method of claim 15 , wherein forming the first polysilicon layer comprises forming the first polysilicon layer to have a first thickness, and wherein forming the second polysilicon layer comprises forming the second polysilicon layer to have a second thickness that is equal to or less than the first thickness.
21. The method of claim 15 , wherein forming the first polysilicon layer comprises forming the doped portion by implanting ions into the first polysilicon layer.