Complimentary lateral III-nitride transistors
View Patent ↗A semiconductor device which includes a laterally extending stack of laterally adjacent conductive semiconductor regions formed over a support surface of a substrate, and a method for fabricating the device.
1. A method for fabricating a semiconductor device comprising:
forming a growth preventative layer over a major surface of a substrate;
removing portions of said growth preventative layer to expose at least one selected portion of said major surface of said substrate, while leaving another portion of said major surface covered with said growth preventative layer adjacent said one selected portion;
forming a first semiconductor column over said one selected portion in an epitaxial growth step, wherein said semiconductor column includes at least one exposed sidewall extending vertically above said growth preventative layer; and
growing a second semiconductor column on said exposed sidewall of said first semiconductor column, said second semiconductor column extending laterally over said growth preventative layer.
2. A method according to claim 1 , wherein no part of said first semiconductor column grows on said growth preventative layer in said forming step.
3. A method according to claim 1 , wherein said first semiconductor column is comprised of GaN.
4. A method according to claim 1 , wherein said substrate is comprised of either SiC, Si, or sapphire.
5. A method according to claim 1 , wherein said second semiconductor column includes an exposed vertical sidewall, and further comprising growing a third semiconductor column on said exposed surface of said second semiconductor column, wherein said first and second semiconductor columns are of one conductivity and said third semiconductor column is of another conductivity, and further comprising forming a first ohmic contact in electrical contact with said first semiconductor column and a second ohmic contact on said third semiconductor column.
6. A method for fabricating a semiconductor device comprising:
forming a growth preventative layer over a major surface of a substrate;
removing portions of said growth preventative layer to expose at least one selected portion of said major surface of said substrate, while leaving another portion of said major surface covered with said growth preventative layer;
forming a first semiconductor column over said one selected portion in an epitaxial growth step, wherein said semiconductor column includes at least one exposed sidewall extending vertically above said substrate; and
growing a second semiconductor column laterally on said exposed sidewall of said first semiconductor column, wherein said second semiconductor column includes an exposed vertical sidewall, and further comprising growing a third semiconductor column on said exposed surface of said second semiconductor column,
wherein said second semiconductor column includes an exposed vertical sidewall, and further comprising growing a third semiconductor column on said exposed surface of said second semiconductor column,
wherein said third semiconductor column includes an exposed sidewall; growing a fourth semiconductor column on said exposed sidewall of said third semiconductor column, wherein said first, second, and fourth semiconductor columns are of one conductivity and said third semiconductor column is of another conductivity, and further comprising forming a first ohmic contact in electrical contact with said first semiconductor column, a second ohmic contact on said fourth semiconductor column, and a gate structure on said third semiconductor column.
7. A method according to claim 6 , wherein each said semiconductor column is comprised of a III-nitride semiconductor.
8. A method according to claim 6 , wherein each said semiconductor column is comprised of GaN.
9. A method according to claim 1 , wherein each said semiconductor column is comprised of a III-nitride semiconductor.
10. A method according to claim 1 , wherein each said semiconductor column is comprised of GaN.