Metal interconnection lines of semiconductor devices and methods of forming the same
View Patent ↗Metal interconnection lines of semiconductor devices and methods of forming the same are disclosed. Improved reliability is achieved in a disclosed metal line of a semiconductor device by preventing metal layers from eroding and preventing metal lines from being destroyed due to electro-migration (EM) and stress-migration (SM). An illustrated metal interconnection line includes: a semiconductor substrate; a metal pattern on the substrate; a glue pattern under the metal pattern; an anti-reflection pattern on the metal pattern; and dummy patterns surrounding side walls of the metal pattern.
1. A metal line of a semiconductor device, comprising:
a semiconductor substrate;
a glue pattern on the substrate;
a metal pattern on the glue pattern;
a dummy pattern on sidewalls of the metal pattern, the dummy pattern having substantially planar horizontal and vertical surfaces and having a height equal to that of the metal pattern; and
an anti-reflection pattern on the metal pattern and the dummy pattern, wherein the anti-reflection pattern has a width equal to that of the metal pattern and the dummy pattern taken together.
2. A metal line as defined in claim 1 , wherein the dummy pattern comprises titanium nitride (TiN), tantalum nitride (TaN), or tungsten nitride (WN).
3. A metal line as defined in claim 1 , wherein the metal pattern comprises Al, Cu, Al—Cu, or Al—Cu—Si.
4. A metal line as defined in claim 1 , wherein a thickness of the metal pattern and a thickness of the dummy pattern are substantially identical.
5. A metal line as defined in claim 1 , wherein the glue pattern comprises a Ti layer, TiN layer, or Ti/TiN layer.
6. A metal line as defined in claim 1 , wherein the glue pattern consists essentially of a Ti layer, TiN layer, or Ti/TiN layer.
7. A metal line as defined in claim 1 , wherein the anti-reflection pattern comprises a Ti/TiN layer.
8. A metal line as defined in claim 1 , wherein the anti-reflection pattern consists essentially of a Ti/TiN layer.
9. A metal line as defined in claim 1 , wherein the substrate comprises a silicon wafer.
10. A metal line as defined in claim 1 , comprising a stacked structure, wherein the anti-reflection pattern, the glue pattern, and pardons of the dummy pattern surround the sidewalls of the metal pattern.
11. A metal line as defined in claim 1 , wherein the substantially planar horizontal and vertical surfaces include substantially the entire uppermost and outermost surfaces of the dummy pattern.
12. A metal line as defined in claim 1 , wherein the substantially planar horizontal and vertical surfaces include the entire surfaces of the dummy pattern.
13. A metal line as defined in claim 1 , wherein the glue pattern consists essentially of a Ti/TiN layer.
14. A metal line as defined in claim 1 , wherein the dummy pattern comprises titanium nitride (TiN).
15. A metal line as defined in claim 1 , wherein the dummy pattern comprises tantalum nitride (TaN).
16. A metal line as defined in claim 1 , wherein the metal pattern consists essentially of Al.
17. A metal line as defined in claim 1 , wherein the metal pattern consists essentially of Cu.
18. A metal line as defined in claim 1 , wherein the metal pattern consists essentially of Al—Cu.