Method of manufacturing a flat panel display incorporating a power supply layer and a storage capacitor element

1. A method of fabricating a flat panel display device, comprising:

forming a power supply layer on an insulation substrate;

forming an insulating layer on the power supply layer;

forming a contact hole exposing a portion of the power supply layer by etching the insulating layer; and

forming an island shaped conductive pattern connected to the power supply layer through the contact hole, wherein the island shaped conductive pattern functions as a source/drain electrode of a thin film transistor and as an electrode of a capacitor.

2. The method according to claim 1 , wherein a part of the power supply layer corresponding to the thin film transistor is patterned so as to remove an effect of backside bias.

3. The method according to claim 1 , wherein the power supply layer comprises an opaque conductive material having a low resistance.

4. The method according to claim 1 , wherein the power supply layer comprises a transparent conductive material having a low resistance.

5. A method of fabricating a flat panel display device, comprising:

providing an insulation substrate having a first and second region;

forming a power supply layer on the insulation substrate;

forming a buffer layer on the power supply layer;

forming a semiconductor layer on the buffer layer in the second region of the insulation substrate;

forming a gate insulating layer enclosing the semiconductor layer;

forming a gate and a first electrode of a capacitor simultaneously on the gate insulating layer;

forming source and drain regions in the semiconductor layer;

forming an interlayer insulating layer on the gate insulating layer enclosing the gate and the first electrode of the capacitor;

simultaneously forming first and second contact holes in the interlayer insulating layer to expose a portion of the source and drain regions, respectively, and a third contact hole to expose the power supply layer;

forming source and drain electrodes contacting the source and drain regions through the first and second contact holes, respectively, and wherein one of the source electrode or the drain electrode is connected to the power supply layer through the third contact hole, by depositing source/drain electrode materials on the interlayer insulating layer and patterning the interlayer insulating layer; and

forming a passivation layer on the interlayer insulating layer, the source and drain electrodes and the second electrode of the capacitor with a via hole exposing a portion of one of the source and drain electrodes.

6. The method according to claim 5 , wherein the source and drain regions are formed by ion implanting one of n-type and p-type impurities into the semiconductor layer such that a part of the semiconductor layer below the gate acts as a channel layer.

7. The method according to claim 5 , wherein the first and second contact holes are formed by etching the interlayer insulating layer.

8. The method according to claim 5 , further comprising forming a pixel electrode on the passivation layer such that the pixel electrode is connected to the drain electrode through a via hole.

9. The method according to claim 8 , further comprising forming a planarization layer on the passivation layer and enclosing the pixel electrode.

10. The method according to claim 9 , further comprising:

forming an opening part by exposing a portion of the pixel electrode;

forming an EL layer in the opening part; and

forming a cathode electrode on the EL layer as a transparent electrode.

11. The method according to claim 10 , wherein the exposing a portion of the pixel electrode is performed by etching the planarization layer.