Semiconductor apparatus, semiconductor storage apparatus, control signal generation method, and replacing method

1. A semiconductor apparatus comprising:

a plurality of electric fuses that can be disconnected electrically;

a selection circuit selecting the plurality of electric fuses in response to a selection signal;

a disconnection circuit disconnecting the selected plurality of electric fuses by passing a current; and

a control signal generator generating a control signal that controls components to be controlled according to connection conditions of the plurality of the electric fuses.

2. The semiconductor apparatus according to claim 1 , wherein with any of the plurality of electric fuses being disconnected, the control signal generator generates a control signal indicating the disconnection.

3. The semiconductor apparatus according to claim 1 , wherein each of the plurality of electric fuses are connected in parallel.

4. The semiconductor apparatus according to claim 1 , wherein each of the plurality of electric fuses are connected in series.

5. A method for generating a control signal for controlling components to be controlled comprising:

selecting a plurality of electric fuses in response to a selection signal;

disconnecting the selected plurality of electric fuses by passing a current; and

generating a control signal according to connection conditions of the plurality of electric fuses.

6. A semiconductor storage apparatus comprising:

a memory cell array having a plurality of memory cells disposed thereto;

a redundant memory cell replacing a defective memory cell generated in the memory cell array;

a plurality of electric fuses mounted to correspond to the redundant memory cell;

a selection circuit selecting the plurality of electric fuses according to a selection signal indicating of the defective memory cell;

a disconnection circuit disconnecting the selected plurality of electric fuses by passing a current;

a replacing signal generator generating a replacing signal according to connection conditions of the plurality of electric fuses; and

a switching circuit replacing the defective memory cell with the redundant memory cell according to the replacing signal.

7. The semiconductor apparatus according to claim 6 , wherein with any of the plurality of electric fuses being disconnected, the replacing signal generator generates a replacing signal indicating the replacement.

8. The semiconductor storage apparatus according to claim 6 , wherein each of the plurality of electric fuses are connected in parallel.

9. The semiconductor storage apparatus according to claim 8 , wherein the selection circuit selects the plurality of electric fuses at a time, and the disconnection circuit disconnects the plurality of electric fuses at a time.

10. The semiconductor storage apparatus according to claim 6 , wherein each of the plurality of electric fuses are connected in series.

11. The semiconductor storage apparatus according to claim 10 , wherein the selection circuit sequentially selects the plurality of electric fuses, and the disconnection circuit disconnects the plurality of electric fuses in an order of the selection.

12. The semiconductor storage apparatus according to claim 6 , wherein the replacing signal generator comprises:

a pulse generator generating a one-shot pulse for reading the connection conditions of the plurality of electric fuses; and

a latch circuit for retaining the connection conditions of the plurality of electric fuses and outputting the replacing signal according to the generated one-shot pulse.

13. The semiconductor storage apparatus according to claim 12 , wherein a pulse width of the generated one-shot pulse is longer than a time for the latch circuit to complete an operation to retain.

14. A method of replacing for replacing a defective cell in a semiconductor storage apparatus including a memory cell array having a plurality of memory cells disposed thereto, a plurality of redundant memory cells replacing a defective memory cell generated in the memory cell array, and a plurality of electric fuses mounted to correspond to the redundant memory cells, the method comprising:

selecting the plurality of electric fuses according to a selection signal indicating of the defective memory cell;

disconnecting the plurality of electric fuses by passing a current;

generating a replacing signal according to connection conditions of the plurality of electric fuses; and

replacing the defective memory cell with the redundant memory cell according to the replacing signal.