Wide area radio frequency plasma apparatus for processing multiple substrates
View Patent ↗An antenna array for a radio frequency plasma process chamber including, an array of electrodes, an array of dielectric tubes concentrically disposed about each electrode tube to define a chamber configured to be at atmospheric pressure between an outer surface of each electrode tube and an inner surface of the corresponding dielectric tube, and a hermetic seal between each dielectric tube and the plasma process chamber configured to allow a vacuum or low pressure in the plasma process chamber.
1. A plasma generating apparatus for processing one or a plurality of substrates within a single vacuum process chamber, the apparatus comprising:
a gas source;
a vacuum process chamber adapted to process the one or a plurality of substrates, the process chamber having a top wall, a bottom wall and sidewalls extending therebetween, the top wall including one or more openings in fluid communication with the gas source and wherein the vacuum process chamber includes a plurality of wafer pedestals;
an antenna array intermediate the one or more openings and the plurality of wafer pedestals, wherein the antenna array comprises a plurality of conductor segments serially coupled together through capacitors, each one of the conductor segments comprising a floating electrode and a dielectric tube concentrically disposed about the floating electrode, wherein the floating electrode is free from contact with the dielectric tube and the electrode floats in a washer disposed intermediate the electrode and the dielectric tube, and wherein the dielectric tube is hermetically sealed at each end against the sidewalls of the process chamber such that the vacuum process chamber can be evacuated during operation thereof while the floating electrode is at atmospheric pressure;
a power source in electrical communication with two of the conductor segments.
2. The plasma generating apparatus of claim 1 , wherein the plurality of conductor segments are comprised of individual conductor segments, wherein at least one of the individual conductor segments is slideably disposed in the sidewall, such that movement of the at least one individual conductor segment changes a planar position.
3. The plasma generating apparatus of claim 1 , wherein the electrode is a tube.
4. The plasma generating apparatus of claim 1 , wherein each one of the conductor segments is fluidly and serially coupled to a cooling tube.
5. The plasma generating apparatus of claim 1 , wherein the power source is a radio frequency power supply.
6. The plasma generating apparatus of claim 1 , wherein the vacuum process chamber has an exhaust aperture disposed in the bottom wall.
7. The plasma generating apparatus of claim 1 , wherein the antenna array is substantially planar.
8. The plasma generating apparatus of claim 1 , wherein each one of the conductor segments are equidistantly spaced apart from one another.
9. The plasma generating apparatus of claim 1 , wherein the electrode is formed of a copper metal and the dielectric tube is formed of a quartz metal.
10. The plasma generating apparatus of claim 1 , wherein each conductor segment is direct current isolated from one another and disposed in series via capacitors such that each conductor segment provides a resonant circuit, with a resonant frequency substantially the same as an operating frequency.
11. The plasma generating apparatus of claim 1 , further comprising an electromechanically controlled mechanism configured to selectively turn off and turn on sections of the antenna array.