Semiconductor device and method of manufacturing the same
View Patent ↗A conductive region electrically connected to a buffer coat film is formed on at least one corner of a semiconductor substrate, so that electricity charged on a package seal resin or a surface of the buffer coat film is allowed to flow toward the conductive region through a conductive path. Thus, density of the electricity charged on the package seal resin or the surface of the buffer coat film is lowered, and electric discharge can be suppressed. Since the electric discharge is suppressed, no high voltage is applied to an external input/output terminal. As a result, it is possible to prevent a circuit metal wire connected to an integrated circuit from being fused and an interlayer insulating film from being damaged.
1. A semiconductor device comprising:
a semiconductor substrate having a semiconductor integrated circuit formed therein and element electrodes formed thereon;
a protection insulating film formed on the semiconductor substrate having openings to expose a conductive region and the element electrodes;.
a buffer coat film formed on the protection insulating film on a semiconductor integrated circuit formation region; the
conductive region electrically connected to the buffer coat film and wherein the conductive region is in a ring shape at a periphery of the semiconductor substrate.
2. The semiconductor device according to claim 1 , wherein the conductive region is formed on at least one corner of the semiconductor substrate.
3. The semiconductor device according to claim 2 , wherein the buffer coat film is extended to a conductive region formation region and is connected to the conductive region.
4. The semiconductor device according to claim 2 , wherein the conductive region is formed over a plurality of wiring layer regions.
5. The semiconductor device according to claim 4 , wherein the conductive region is formed over a semiconductor silicon substrate.
6. The semiconductor device according to claim 1 , wherein the conductive region formed on the semiconductor substrate is one of a seal ring and a corner peeling suppression pattern.
7. The semiconductor device according to claim 1 , wherein the conductive region is formed over a plurality of wiring layer regions.
8. The semiconductor device according to claim 7 , wherein the conductive region is formed over a semiconductor silicon substrate.
9. The semiconductor device according to claim 2 , wherein the conductive region is spirally formed over a plurality of wiring layer regions.
10. A semiconductor device comprising:
a semiconductor substrate having a semiconductor integrated circuit formed therein and element electrodes formed thereon;
a protection insulating film formed on the semiconductor substrate having openings to expose a conductive region and the element electrodes.
a buffer coat film formed on the protection insulating film on a semiconductor integrated circuit formation region, and connected to at least one ground electrode of the element electrodes and wherein the conductive region is in a ring shape at a periphery of the semiconductor substrate.
11. The semiconductor device according to claim 10 , wherein the buffer coat film is extended toward and connected to the ground electrode.