Manufacturing and cleansing of thin film transistor panels
View Patent ↗A manufacturing a thin film transistor array panel includes depositing a first thin film including aluminum on a substrate, patterning the first thin film by photolithography and etching, cleansing the substrate including the first thin film, and depositing a second thin film on the cleansed substrate. The cleansing is performed using a cleansing material including ultrapure water, cyclic amine, pyrogallol, benzotrizole, and methyl glycol. The cleansing material includes ultrapure water at about 85 wt % to about 99 wt %, cyclic amine at about 0.01 wt % to about 1.0 wt %, pyrogallol at about 0.01 wt % to 1.0 wt %, benzotrizole at about 0.01 wt % to 1.0 wt %, and methyl glycol at about 0.01 wt % to 1.0 wt %.
1. A manufacturing method of a thin film transistor array panel, comprising:
depositing a first thin film on a substrate;
patterning the first thin film by photolithography and etching;
cleansing the substrate including the first thin film with a cleansing material comprising ultrapure water, cyclic amine, pyrogallol, benzotriazole, and methyl glycol
depositing a second thin film on the cleansed substrate.
2. The manufacturing method of claim 1 , wherein the cleansing material contains about 85 wt % to about 99 wt % ultrapure water.
3. The manufacturing method of claim 1 , wherein the cleansing material contains about 85 wt % to about 99 wt % cyclic amine.
4. The manufacturing method of claim 1 , wherein the cleansing material contains about 0.01 wt % to 1.0 wt % pyrogallol.
5. The manufacturing method of claim 1 , wherein the cleansing material contains about 0.01 wt % to 1.0 wt % benzotrizole.
6. The manufacturing method of claim 1 , wherein the cleansing material contains about 0.01 wt % to 1.0 wt % methyl glycol.
7. The manufacturing method of claim 1 , wherein the cleansing material contains about 0.1 wt % cyclic amine, about 0.05 wt % pyrogallol, about 0.1 wt % benzotrizole, and about 0.1 wt % methyl glycol.
8. The manufacturing method of claim 1 , wherein the cleansing material contains pyrogallol and benzotrizole of about 2 wt % altogether.
9. The manufacturing method of claim 1 , wherein the first thin film comprises aluminum.
10. The manufacturing method of claim 9 , wherein the first thin film has a first layer including aluminum and a second layer including another conductive material.
11. The manufacturing method of claim 9 , wherein the first thin film has a first layer including aluminum, a second layer disposed thereon and a third layer disposed thereunder including another conductive material.
12. A manufacturing method of a thin film transistor array panel, comprising:
forming a gate line on a substrate;
cleansing the substrate including the gate line;
depositing a gate insulating layer on the cleansed substrate;
forming a semiconductor layer on the gate insulating layer;
forming a data line and a drain electrode on the semiconductor layer and the gate insulating layer; and
forming a pixel electrode connected to the drain electrode, wherein the cleansing is performed using a cleansing material comprising ultrapure water, cyclic amine, pyrogallol, benzotrizole, and methyl glycol.
13. The manufacturing method of claim 12 , wherein the cleansing material contains about 85 wt % to about 99 wt % ultrapure water.
14. The manufacturing method of claim 12 , wherein the cleansing material contains about 0.01 wt % to about 1.0 wt % cyclic amine.
15. The manufacturing method of claim 12 , wherein the cleansing material contains about 0.01 wt % to 1.0 wt % pyrogallol.
16. The manufacturing method of claim 12 , wherein the cleansing material contains about 0.01 wt % to 1.0 wt % benzotrizole.
17. The manufacturing method of claim 12 , wherein the cleansing material contains about 0.01 wt % to 1.0 wt % methyl glycol.
18. The manufacturing method of claim 12 , wherein the cleansing material contains about 0.1 wt % cyclic amine, about 0.05 wt % pyrogallol, about 0.1 wt % benzotrizole, and about 0.1 wt % methyl glycol.
19. The manufacturing method of claim 12 , wherein the cleansing material contains pyrogallol and benzotrizole of about 2 wt % altogether.
20. The manufacturing method of claim 12 , wherein the gate line comprises aluminum.
21. The manufacturing method of claim 20 , wherein the gate line has a first layer including aluminum and a second layer including another conductive material.
22. The manufacturing method of claim 12 , wherein the data line and the drain electrode comprise aluminum.
23. The manufacturing method of claim 22 , wherein the data line and drain electrode have a first layer including aluminum, a second layer disposed thereon and a third layer disposed thereunder that includes another conductive material.
24. The manufacturing method of claim 12 , further comprising: cleansing the substrate including the data line and drain electrode; and forming a passivation layer on the cleansed substrate.
25. The manufacturing method of claim 24 , wherein the cleansing is performed using a cleansing material comprising ultrapure water, cyclic amine, pyrogallol, benzotrizole, and methyl glycol.
26. The manufacturing method of claim 25 , wherein the cleansing material contains about 0.1 wt % cyclic amine, about 0.05 wt % pyrogallol, about 0.1 wt % benzotrizole, and about 0.1 wt % methyl glycol.
27. The manufacturing method of claim 25 , wherein the cleansing material contains pyrogallol and benzotrizole of about 2 wt % altogether.