Liquid crystal display device and method for fabricating the same
View Patent ↗A liquid crystal display device and a fabricating method thereof for securing aperture ratio are disclosed. In the liquid crystal display device, a gate line is formed. A data line crosses the gate line. A thin film transistor is provided at an intersection of the gate line and the data line. A semiconductor pattern is overlapped with the data line under the data line, and includes an active layer of the thin film transistor. A step coverage does not exist between an etched edge surface of the semiconductor pattern disposed at a lower portion of the data line and an etched edge surface of the data line.
1. A method of fabricating a liquid crystal display device, comprising:
forming a first conductive pattern group including a gate line and a gate electrode connected to the gate line on a lower substrate using a first mask;
forming a gate insulating film covering the first conductive pattern group;
forming a semiconductor pattern having an active layer and an ohmic contact layer, and a second conductive pattern group including a data line overlapped with the semiconductor pattern and a source-drain metal pattern overlapped with the semiconductor pattern on the gate insulating film using a second mask;
forming a protective film including a first contact hole covering the semiconductor pattern and the second conductive pattern group, and exposing a portion of the source-drain metal pattern using a third mask; and
separating a source electrode and a drain electrode from the source-drain metal pattern after forming the protective film, forming a channel portion between the source electrode and the drain electrode, and forming a pixel electrode covering the first contact hole using a fourth mask,
wherein the fourth mask includes a transmitting area, a shielding area, and a partial transmitting area,
wherein a step of using the fourth mask includes:
sequentially disposing a transparent conductive film and a photo-resist on the protective film;
forming a first photo-resist pattern at a portion corresponding to the shielding area, and a second photo-resist pattern having a height substantially lower than a first photo-resist pattern at a portion corresponding to the partial transmitting area by the exposure process and the development process;
etching the transparent conductive film exposed by the first and second photo-resist patterns to expose the protective film;
etching the exposed protective film, the source-drain metal pattern provided at a lower portion of the exposed protective film, and an ohmic contact layer to expose the active layer;
ashing the first and second photo-resist patterns using a plasma gas to remove the second photo-resist pattern, and to expose the transparent conductive film;
etching the exposed transparent conductive film to pattern; and
stripping the first photo-resist pattern,
wherein a channel protective film is formed at an upper portion of the exposed active layer by an ashing process using the plasma gas.
2. The method of fabricating the liquid crystal display device as claimed in claim 1 , wherein the second mask includes a transmitting area and a shielding area.
3. The method of fabricating the liquid crystal display device as claimed in claim 1 , wherein a step of using the second mask includes:
sequentially disposing an amorphous silicon layer, a n+ amorphous silicon layer, a source/drain metal layer, and a photo-resist on the gate insulating film;
forming a photo-resist pattern at a portion corresponding to the shielding area by an exposure process and a development process;
sequentially etching the source/drain metal layer exposed by the photo-resist pattern, the n+ amorphous silicon layer provided at a lower portion of the exposed source/drain metal layer, and the amorphous silicon layer to pattern the second conductive pattern group; and
stripping the photo-resist pattern.
4. The method of fabricating the liquid crystal display device as claimed in claim 3 , wherein the step of sequentially etching the source/drain metal layer exposed by the photo-resist pattern, the n+ amorphous silicon layer provided at a lower portion of the exposed source/drain metal layer, and the amorphous silicon layer to pattern the second conductive pattern group includes:
wet-etching the exposed source/drain metal layer; and
dry-etching the n+ amorphous silicon layer provided at a lower portion of the exposed source/drain metal layer, and the amorphous silicon layer.
5. The method of fabricating the liquid crystal display device as claimed in claim 1 , wherein the exposed source-drain metal pattern, and an ohmic contact layer provided at a lower portion of the exposed source-drain metal pattern are etched by a dry-etching process.
6. The method of fabricating the liquid crystal display device as claimed in claim 1 , wherein the step of forming the second conductive pattern group is simultaneously carried out with a step of forming a lower data pad electrode connected to the data line.
7. The method of fabricating the liquid crystal display device as claimed in claim 6 , wherein the step of forming a protective film including the first contact hole is simultaneously carried out with a step of forming a second contact hole exposing the lower data pad electrode.
8. The method or fabricating the liquid crystal display device as claimed in claim 1 , wherein the step of forming the pixel electrode is simultaneously carried out with a step of forming an upper data pad electrode connected to a lower data pad electrode exposed via the second contact hole.