Organic thin film transistor and method of manufacturing the organic thin film transistor, and display apparatus using the same
View Patent ↗Provided are an organic semiconductor structure and a method of manufacturing the same, an organic thin film transistor (OTFT) using the organic semiconductor structure and a method of manufacturing the OTFT, and a display apparatus using the same. The OTFT includes: an oxide layer formed on a base substrate; a source electrode on the oxide layer, wherein the source electrode includes a first source electrode portion and a second source electrode portion; a drain electrode on the oxide layer, wherein the drain electrode includes a first drain electrode portion and a second drain electrode portion; an organic layer pattern having an opening that exposes the first source electrode portion and the first drain electrode portion; an organic semiconductor pattern electrically connected to the first source electrode portion and the first drain electrode portion through the opening, wherein the organic semiconductor pattern has a conductive or an insulating property depending on an applied electric field in a location; a gate insulating layer covering the organic semiconductor pattern; and a gate electrode formed on the gate insulating layer corresponding to the organic semiconductor pattern.
1. A method of manufacturing an organic thin film transistor (OTFT), the method comprising:
forming an oxide layer on a base substrate;
forming source and drain electrodes on the oxide layer, wherein the source electrode is spaced apart from the drain electrode and exposing a portion of the oxide layer;
forming a organic layer pattern having an opening on the base substrate, the opening exposing portions of the source and drain electrodes and the portion of the oxide layer;
treating the exposed portions of the source and drain electrodes and the potion of the oxide layer by an O 2 plasma to form a hydrophilic source electrode portion in the source electrode and a hydrophilic drain electrode portion in the drain electrode;
forming a hydrophilic organic semiconductor pattern electrically connected to hydrophilic source electrode portion and the hydrophilic drain electrode portion through the opening; forming a gate insulating layer covering the hydrophilic organic semiconductor pattern; and
forming a gate electrode on a predetermined portion of the gate insulating layer corresponding to the organic semiconductor pattern.
2. The method according to claim 1 , wherein the forming of the organic semiconductor pattern includes:
coating a fluid organic semiconductor material on the organic layer pattern so that the organic semiconductor material fills the opening; and
hardening the organic semiconductor material to form an organic semiconductor pattern.
3. The method according to claim 1 , wherein the organic layer pattern has a photosensitive substance.
4. The method according to claim 1 , wherein the organic layer pattern includes an acryl based synthetic resin.