Method of patterning multiple-layered resist film and method of manufacturing semiconductor device
View Patent ↗A method of patterning a multiple-layered resist film and a method of manufacturing a semiconductor device, which can provide an improved reliability of the semiconductor devices and a reduced operation time for an etch process, are provided. A method of patterning a multiple-layered resist film according to the present invention include: forming a lower layer resist film 104 on a semiconductor substrate; forming a silicon-containing upper layer resist film on the lower layer resist film 104 ; patterning the silicon-containing upper layer resist film into a predetermined geometry; and performing dry etching process for removing the lower layer resist film 104 through a mask of the patterned silicon-containing upper layer resist film 106 employing an etching gas containing oxygen (O 2 ) gas and argon (Ar) gas at a pressure within a range of from 0.075 mTorr to 50 mTorr both inclusive.
1. A method of patterning a multiple-layered resist film, comprising:
forming a lower layer resist film on a semiconductor substrate;
forming a silicon-containing upper layer resist film on said lower layer resist film;
patterning said silicon-containing upper layer resist film; and
performing a Reactive Ion Etching (RIE) process for removing said lower layer resist film through a mask of said pattered silicon-containing upper layer resist film employing an etching gas containing oxygen gas and argon gas at pressure within a range of from 0.075 mTorr to 50 mTorr both inclusive, and flowing the oxygen gas at between about 100 and 200 sccm,
wherein, in said performing said RIE process, due to a sputtering of said silicon-containing upper layer resist film during said RIE process, silicon-containing deposits are adhered onto a side surface of an opening formed by etching said lower layer resist film employing said silicon-containing upper layer resist film as a mask.
2. The method of patterning a multiple-layered resist film according to claim 1 , wherein said silicon-containing deposits are produced by sputtering said silicon-containing upper layer resist film with argon atoms.