Processing apparatus

1. A processing apparatus, comprising:

a loading chamber;

a buffer chamber connected to the loading chamber;

a first process chamber connected to the buffer chamber;

an unloading chamber connected to the first process chamber, and

an air pad disposed in each of the chambers,

a heater in respective centers of each of the buffer chamber and the first process chamber for controlling a temperature of first and second substrates,

wherein a processing path through the processing apparatus is a forward in-line path in a direction through the loading chamber, the buffer chamber, the first process chamber, and the unloading chamber,

wherein each air pad has a plurality of holes for injecting a gas,

wherein the first and second substrates are maintained in a balanced and substantially vertical state by a pressure by the gas generated by the air pad,

wherein the first and second substrates are seated respectively on rollers to transfer the substrates through the processing path,

wherein the first process chamber includes first and second targets mounted on first and second cathodes, and

wherein the first substrate paralleling with the first cathode is disposed between the first cathode and the heater,

the second substrate paralleling with the second cathode is disposed between the second cathode and the heater, and

the first and second substrates are non-parallel with the heater.

2. The processing apparatus according to claim 1 , wherein the first process chamber unit simultaneously processes the first and second substrates.

3. The processing apparatus according to claim 1 , wherein the heater comprises first and second heaters in the first process chamber; and a partition is formed between the first and second heaters for forming and sealing independent first and second process spaces in the first process chamber.

4. The processing apparatus according to claim 3 , wherein the first and second heaters operate independently in each of the first and second process spaces.

5. The processing apparatus according to claim 3 , wherein the first and second substrates are disposed in the first process chamber for independent processing in each of the first and second process spaces, respectively.

6. The processing apparatus according to claim 1 , further comprising a second process chamber connected to the first process chamber between the first process chamber and the unloading chamber.

7. The processing apparatus according to claim 1 , further comprising first and second conveying guide chambers between the unloading chamber and the loading chamber.

8. The processing apparatus according to claim 7 , wherein the first and second conveying guide chambers are spaced apart from each of all chambers excluding the first and second conveying guide chambers.

9. A processing apparatus comprising:

a loading chamber unit;

a buffer chamber unit connected to the loading chamber unit;

a process chamber unit connected to the buffer chamber unit;

an unloading chamber unit connected to the process chamber unit, and

an air pad disposed in each of the chambers,

wherein a heater is disposed in the center of each of the chamber units,

wherein each air pad has a plurality of holes for injecting a gas,

wherein first and second substrates are maintained in a balanced and substantially vertical state by a pressure by the gas generated by the air pad,

wherein the first and second substrates are seated respectively on rollers to transfer the substrates through each of the chambers,

wherein the first process chamber includes first and second targets mounted on first and second cathodes, and

wherein the first substrate paralleling with the first cathode is disposed between the first cathode and the heater,

the second substrate paralleling with the second cathode is disposed between the second cathode and the heater, and

the first and second substrates are non-parallel with the heater.

10. The processing apparatus according to claim 9 , wherein each of the chamber units is disposed in a straight line.

11. The processing apparatus according to claim 9 , wherein the first process chamber unit simultaneously processes the first and second substrates.

12. The processing apparatus according to claim 11 , wherein the first and second substrates are temperature-controlled by the heater simultaneously.

13. The processing apparatus according to claim 9 , wherein the heater comprises first and second heaters spaced a predetermined distance apart from each other.

14. The processing apparatus according to claim 13 , further comprising a partition disposed between the first and second heaters to form first and second process spaces.