Array substrate for liquid crystal display device and method of fabricating the same
View Patent ↗An array substrate for a liquid crystal display device includes a first source electrode and a first drain electrode on a substrate, wherein the first source electrode and the first drain electrode are separated from each other and formed of a metallic material, a second source electrode and a second drain electrode on the first source electrode and the first drain electrode, respectively, and are formed of a transparent conductive material, wherein the second source electrode covers an upper surface of the first source electrode, and the second drain electrode covers an upper surface of the first drain electrode, a pixel electrode on the substrate and contacting the second drain electrode on the substrate, an organic semiconductor layer on the substrate, a gate insulating layer on the organic semiconductor layer, and a gate electrode on the gate insulating layer.
1. An array substrate for a liquid crystal display device, comprising:
a first source electrode and a first drain electrode on a substrate, wherein the first source electrode and the first drain electrode are separated from each other and formed of a metallic material;
a second source electrode and a second drain electrode on the first source electrode and the first drain electrode, respectively, and are formed of a transparent conductive material, wherein the second source electrode covers an upper surface of the first source electrode, and the second drain electrode covers an upper surface of the first drain electrode;
a pixel electrode on the substrate and contacting the second drain electrode on the substrate;
an organic semiconductor layer on the substrate;
a gate insulating layer on the organic semiconductor layer;
a gate electrode on the gate insulating layer;
a first passivation layer including a gate contact hole on the gate electrode, the gate contact hole exposing the gate electrode; and
a gate line on the passivation layer and contacting the gate electrode through the gate contact hole.
2. The substrate according to claim 1 , further comprising:
a first data line extending form the first source electrode and being formed of a same layer and with a same material as the first source electrode; and
a second data line extending form the second source electrode and being formed of a same layer and with a same material as the second source electrode.
3. The substrate according to claim 2 , wherein the second data line covers an upper surface of the first data line.
4. The substrate according to claim 3 , wherein the second data line covers side surfaces of the first data line.
5. The substrate according to claim 1 , wherein the first passivation layer includes an open portion exposing the pixel electrode.
6. The substrate according to claim 1 , further comprising a second passivation layer on the gate line.
7. The substrate according to claim 1 , wherein the transparent conductive material includes one of indium-tin-oxide and indium-zinc-oxide.
8. The substrate according to claim 1 , wherein the pixel electrode is formed in a same layer and of a same material as the second drain electrode.
9. The substrate according to claim 1 , wherein the metallic material includes one of antigen, aluminum, aluminum alloy, molybdenum, copper and copper alloy.
10. The substrate according to claim 1 , wherein the organic semiconductor layer, the gate insulating layer and the gate electrode have a same shape as one another.
11. The substrate according to claim 10 , wherein the organic semiconductor layer, the gate insulating layer and the gate electrode have end lines coinciding with one another.
12. The substrate according to claim 1 , further comprising a buffer layer between the substrate and the organic semiconductor layer.
13. The substrate according to claim 1 , wherein the second source electrode covers side surfaces of the first source electrode and the second drain electrode covers side surfaces of the first drain electrode.
14. The substrate according to claim 1 , wherein the organic semiconductor layer is formed on the second source and drain electrodes, and the gate insulating layer and the gate electrode are sequentially formed on the organic semiconductor layer.
15. The substrate according to claim 1 , wherein the gate electrode includes one of molybdenum and Chromium.
16. A method of fabricating an array substrate for a liquid crystal display device, comprising:
forming a first source electrode and a first drain electrode of a metallic material on a substrate separated from each other;
forming a second source electrode and a second drain electrode of a transparent conductive material on the first source electrode and the first drain electrode, respectively, wherein the second source electrode covers an upper surface of the first source electrode, and the second drain electrode covers an upper surface of the first drain electrode;
forming a pixel electrode contacting the second drain electrode on the substrate;
forming an organic semiconductor layer on the substrate;
forming a gate insulating layer on the organic semiconductor layer;
forming a gate electrode on the gate insulating layer;
forming a first passivation layer including a gate contact hole on the gate electrode, the gate contact hole exposing the gate electrode; and
forming a gate line on the passivation layer and contacting the gate electrode through the gate contact hole.
17. The method according to claim 16 , further comprising:
forming a first data line extending from the first source electrode; and
forming a second data line extending from the second source electrode.
18. The method according to claim 17 , wherein the second data line covers an upper surface of the first data line.
19. The method according to claim 18 , wherein the second data line covers side surfaces of the first data line.
20. The method according to claim 16 , wherein the first passivation layer includes an open portion exposing the pixel electrode.
21. The method according to claim 16 , further comprising forming a second passivation layer on the gate line.
22. The method according to claim 16 , wherein the pixel electrode is simultaneously formed while forming the second drain electrode.
23. The method according to claim 16 , wherein the organic semiconductor layer, the gate insulating layer and the gate electrode are formed by using a same mask as one another.
24. The method according to claim 23 , wherein the organic semiconductor layer, the gate insulating layer and the gate electrode have end lines coinciding with one another.
25. The method according to claim 16 , further comprising forming a buffer layer between the substrate and the organic semiconductor layer.
26. The method according to claim 16 , further comprising treating the substrate, including the source and drain electrode, with an oxygen plasma before forming the semiconductor layer.
27. The method according to claim 16 , wherein the forming the second source electrode and the second drain electrode uses a same mask as the forming the first source electrode and the first drain electrode.
28. The method according to claim 16 , wherein the second source electrode covers side surface of the first source electrode and the second drain electrode covers side surface of the second drain electrode.