Liquid crystal display device and fabricating method thereof
View Patent ↗A thin film transistor array substrate includes a gate line provided on a substrate, a data line crossing the gate line to define a pixel area, a gate insulating film between the gate line and the data line at the crossing of the gate line and data line, a thin film transistor adjacent to the crossing of the gate line and the data line, a protective film covering the thin film transistor, a pixel electrode on the pixel area and electrically connected to a drain electrode of the thin film transistor, a gate pad connected to the gate line, a data pad connected to the data line, a lower data link electrode connected to the data line, an upper data link electrode connected to the data line and overlapping one end of the lower data link electrode, and a link electrode connecting the lower data link electrode via a first contact hole passing through the protective film and the gate insulating film at a first area of the substrate in which the protective film is directly provided on the gate insulating film.
1. A thin film transistor array substrate, comprising:
a gate line provided on a substrate;
a data line crossing the gate line to define a pixel area;
a gate insulating film between the gate line and the data line at the crossing of the gate line and data line;
a thin film transistor adjacent to the crossing of the gate line and the data line;
a protective film covering the thin film transistor;
a pixel electrode provided on the pixel area and electrically connected to a drain electrode of the thin film transistor;
a gate pad connected to the gate line;
a data pad connected to the data line;
a lower data link electrode connected to the data line;
an upper data link electrode connected to the data line and overlapping one end of the lower data link electrode; and
a link electrode connecting the lower data link electrode via a first contact hole passing through the protective film and the gate insulating film at a first area of the substrate in which the protective film is directly provided on the gate insulating film,
wherein the lower surface of the link electrode is connected on the upper surface of the lower data link electrode,
wherein the gate insulating film and a semiconductor layer formed between the upper data link electrode and the lower data link electrode,
wherein the first contact hole is formed at an end of the upper data link electrode adjacent to the data pad.
2. The thin film transistor array substrate as claimed in claim 1 , further comprising a storage electrode overlapping the gate line with the gate insulating film therebetween to form a storage capacitor.
3. The thin film transistor array substrate as claimed in claim 1 , wherein the data pad includes:
a lower data pad electrode extending from the lower data link electrode; and
an upper data pad electrode connected to the lower data pad electrode via a second contact hole passing through the gate insulating film and the protective film at a second area of the substrate in which the protective film is directly provided on the gate insulating film.
4. The thin film transistor array substrate as claimed in claim 1 , wherein the gate pad includes:
a lower gate pad electrode extending from the gate line; and
an upper gate pad electrode connected via a third contact hole passing through the gate insulating film and the protective film to the lower gate pad electrode at a third area of the substrate in which the protective film is directly provided on the gate insulating film.
5. A method of fabricating a thin film transistor array substrate, comprising:
forming a gate line, and a gate pad connected to the gate line on a substrate;
forming a gate insulating film on the gate line;
forming a data line crossing the gate line to define a pixel area, and a data pad connected to the data line;
forming a protective film covering a thin film transistor provided at a crossing of the gate line and the data line;
forming a pixel electrode provided on the pixel area, and electrically connected to a drain electrode of the thin film transistor;
forming a lower data link electrode connected to the data line;
forming an upper data link electrode connected to the data line and overlapping one end of the lower data link electrode; and
forming a link electrode connecting the lower data link electrode via a first contact hole passing through the protective film and the gate insulating film at a first area in which the protective film is directly provided on the gate insulating film,
wherein the lower surface of the link electrode is connected on the upper surface of the lower data link electrode,
wherein the gate i insulating film and a semiconductor layer formed between the upper data link electrode and the lower data link electrode,
wherein the first contact hole is formed at an end of the upper data link electrode adjacent to the data pad.
6. The method of fabricating a thin film transistor array substrate as claimed in claim 5 , further comprising:
forming a storage capacitor comprised of the gate line, and a storage electrode overlapped with the gate line with having the gate insulating film therebetween.
7. The method of fabricating a thin film transistor array substrate as claimed in claim 5 , wherein the forming the data pad includes:
forming a lower data pad electrode extended from the lower data link electrode; and
forming an upper data pad electrode connected to the lower data pad electrode via a second contact hole passing through the gate insulating film and the protective film at a second area of the substrate in which the protective film is directly provided on the gate insulating film.
8. The method of fabricating a thin film transistor array substrate as claimed in claim 5 , wherein the forming the gate pad includes:
forming a lower gate pad electrode extended from the gate line; and
forming an upper gate pad electrode connected to the lower gate pad electrode via a third contact hole passing through the gate insulating film and the protective film at a third area of the substrate in which the protective film is directly provided on the gate insulating film.
9. A method of fabricating a thin film transistor array substrate, comprising:
forming a first mask pattern group having a gate line, a gate electrode connected to a gate line and a lower gate pad electrode, a lower data pad electrode to be connected to a data line, and a lower data link electrode connected to a lower data pad electrode on a substrate;
forming a second mask pattern group having a gate insulating film over the first mask pattern group, a semiconductor layer formed on a gate insulating film, a data line provided on a semiconductor layer and crossing the gate line to define a pixel area, a source electrode of a thin film transistor connected to a data line, a drain electrode opposed to a source electrode, and an upper data link electrode connected to a data line and provided to overlap one end of a lower data link electrode; and
forming a third mask pattern group including a protective film formed to cover a second mask pattern group, a pixel electrode connected to a drain electrode using a lift-off process, and a link electrode connecting a lower data link electrode exposed via a first contact hole passing through a protective film and a gate insulating film at a first area of the substrate in which the protective film is directly provided on the gate insulating film.
10. The method of fabricating a thin film transistor array substrate as claimed in claim 9 , wherein the forming the second mask pattern further includes forming a storage electrode overlapped with the gate line with the gate insulating film therebetween to provide a storage capacitor.
11. The method of fabricating a thin film transistor array substrate as claimed in claim 9 , wherein the forming the third mask pattern includes forming the first contact hole at an end of the upper data link electrode adjacent to the data pad.
12. The method of fabricating a thin film transistor array substrate as claimed in claim 9 , wherein the forming the third mask pattern further includes forming an upper gate pad electrode connected to the lower gate pad electrode via a second contact hole passing through the protective and the gate insulating film at a second area of the substrate in which the protective film is directly provided on the gate insulating film.
13. The method of fabricating a thin film transistor array substrate as claimed in claim 9 , wherein the forming the third mask pattern further includes forming an upper data pad electrode connected to the lower data pad electrode via a third contact hole passing through the protective film and the gate insulating film at a third area of the substrate in which the protective film is directly provided on the gate insulating film.
14. A thin film transistor array substrate, comprising:
a gate line provided on a substrate;
a data line crossing the gate line to define a pixel area;
a gate insulating film between the gate line and the data line at the crossing of the gate line and data line;
a protective film directly provided on the gate insulating film at first, second and third areas of the substrate;
a gate pad connected to the gate line;
a data pad connected to the data line;
a lower data link electrode connected to the data line;
an upper data link electrode connected to the data line and overlapping one end of the lower data link electrode;
a link electrode connecting the lower data link electrode via a first contact hole passing through the protective film and the gate insulating film at the first area;
a lower data pad electrode extending from the lower data link electrode;
an upper data pad electrode connected to the lower data pad electrode via a second contact hole passing through the gate insulating film and the protective film at the second area;
a lower gate pad electrode extending from the gate line; and
an upper gate pad electrode connected via a third contact hole passing through the gate insulating film and the protective film to the lower gate pad electrode at the third area,
wherein the lower surface of the link electrode is connected on the upper surface of the lower data link electrode,
wherein the gate insulating film and a semiconductor layer formed between the upper data link electrode and the lower data link electrode,
wherein the first contact hole is formed at an end of the upper data link electrode adjacent to the data pad.
15. The thin film transistor array substrate as claimed in claim 14 , further comprising a storage electrode overlapping the gate line with the gate insulating film therebetween to form a storage capacitor.