Semiconductor device and a method of manufacturing the same
A semiconductor device and method having high output and having reduced external resistance is reduced and improved radiating performance. A MOSFET ( 70 ) has a connecting portion for electrically connecting a surface electrode of a semiconductor pellet and a plurality of inner leads, a resin encapsulant ( 29 ), a plurality of outer leads ( 37 ), ( 38 ) protruding in parallel from the same lateral surface of the resin encapsulant ( 29 ) and a header ( 28 ) bonded to a back surface of the semiconductor pellet and having a header protruding portion ( 28 c ) protruding from a lateral surface of the resin encapsulant ( 29 ) opposite to the lateral surface from which the outer leads protrude, wherein the header ( 28 ) has an exposed surface ( 28 b ) exposed from the resin encapsulant ( 29 ); the outer leads ( 37 ), ( 38 ) are bent; and the exposed of the outer leads ( 37 ), ( 38 ) are provided at substantially the same height.
1. A semiconductor device, comprising:
a semiconductor chip including a MOSFET, said semiconductor chip having a main surface and a back surface opposite to said main surface, and said semiconductor chip having gate and source electrodes of the MOSFET disposed on said main surface and a drain electrode of the MOSFET disposed on said back surface;
a gate lead having an inner lead and an outer lead which is continuous with said inner lead, said inner lead of said gate lead having a first portion which is disposed on said main surface of said semiconductor chip and being electrically connected to said gate electrode;
a source lead having an inner lead and a plurality of outer leads which are continuous with said inner lead, said inner lead of said source lead having a first portion which is disposed on said first main surface of said semiconductor chip and being electrically connected to said source electrode, said outer leads extending from said first portion of said source lead;
a drain lead of a plate shape being disposed on said back surface of said semiconductor chip and being electrically connected to said drain electrode, said drain lead having a first portion and a second portion which is continuous with said first portion, and said second portion overlapping said semiconductor chip in a plan view; and
a resin member having a first pair of opposed side surfaces extending in a first direction and a second pair of opposed side surfaces extending in a second direction perpendicular to said first direction, said resin member sealing said semiconductor chip and said inner leads of said gate and source leads;
wherein said outer leads of said gate and source leads protrude outwardly from a first side surface of said second pair of opposed side surfaces of said resin member and extend in said first direction;
wherein said first portion of said drain lead extends outwardly from a second side surface of said second pair of opposed side surfaces of said resin member, said second portion of said drain lead is partially covered with the resin member, and a rear surface of said second portion is exposed from said resin member;
wherein said outer leads of said gate and source leads are bent downwardly toward said drain lead;
wherein rear surfaces of said gate and source leads and said rear surface of said drain lead are in a same level;
wherein a width in the second direction of an outside edge portion of said drain lead outside of the resin member is than that of said second portion of said drain lead.
2. A semiconductor device according to claim 1 , wherein said inner leads of said gate and source leads are respectively connected with said gate and source electrodes of said semiconductor chip via bump electrodes.
3. A semiconductor device according to claim 1 , wherein said semiconductor device is a surface mount device.